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Recent progress in the growth of β-Ga2O3 for power electronics applications
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TLDR
In this article, a review article focuses on the growth of bulk and homoepitaxial β-Ga2O3, summarizing the research work carried out in this field and pointing out the strengths and the main challenges of different growth techniques.About:
This article is published in Materials Science in Semiconductor Processing.The article was published on 2017-10-01. It has received 160 citations till now.read more
Citations
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Projected Cost of Gallium Oxide Wafers from Edge-Defined Film-Fed Crystal Growth
TL;DR: In this paper , the authors present a cost analysis for 6-inch β-Ga2O3 epi-wafers fabricated from crystals grown via edge-defined film-fed growth (EFG).
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Free carrier-induced optical nonlinearities in β-Ga2O3 single crystals at 355 nm
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A self-powered deep-ultraviolet photodetector based on a hybrid organic-inorganic p-P3HT/n-Ga2O3 heterostructure
Xiaohui Qi,Xueqiang Ji,Jianying Yue,Lei Li,Xiao Wang,Ling Du,Zeng Liu,Peigang Li,Yu Guo,Weihua Tang +9 more
TL;DR: A self-powered deep ultraviolet photodetector based on a hybrid poly(3-hexylthiophene) (P3HT)/β-gallium oxide-(β-Ga2O3) heterojunction with planar structure is presented in this paper .
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Fabrication and characterization of GaAs nanoparticles achieved using femtosecond laser ablation
A. Mangababu,G. Sarang Dev,B. Chandu,Moram Sree Satya Bharati,P. Debashish,S. Venugopal Rao,S. V. S. Nageswara Rao +6 more
TL;DR: In this article, the effect of different laser energies such as 100μJ, 200μJ and 500μJ on the produced GaAs was investigated and it was observed that there was a slight increase in the GaAs size with an increase in laser energy.
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Thickness effect on solar-blind photoelectric properties of ultrathin β-Ga2O3 films prepared by atomic layer deposition
Shaoqing Wang,Nini Cheng,Haian Wang,Yi Fan Jia,Q. Lu,Jing-Yu Ning,Yue Hao,Xiangtai Liu,Haifeng Chen +8 more
TL;DR: In this paper , Ga2O3-based solar blind photodetectors with different thickness were fabricated and studied, and the experimental results showed that the responsivity of the photodeter increases exponentially with the increase of the film thickness.
References
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Journal ArticleDOI
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
TL;DR: In this paper, a single-crystal gallium oxide (Ga2O3) metal-semiconductor field effect transistors (MESFETs) with a gate length of 4 μm and a source-drain spacing of 20 μm is presented.
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Recent progress in Ga2O3 power devices
Masataka Higashiwaki,Kohei Sasaki,Hisashi Murakami,Yoshinao Kumagai,Akinori Koukitu,Akito Kuramata,Takekazu Masui,Shigenobu Yamakoshi +7 more
TL;DR: In this article, a review article on the current status and future prospects of the research and development on gallium oxide (Ga2O3) power devices is presented, covering single-crystal bulk and wafer production, homoepitaxial thin film growth by molecular beam epitaxy and halide vapor phase epitaxy.
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Oxygen vacancies and donor impurities in β-Ga2O3
TL;DR: In this paper, the role of oxygen vacancies and various impurities in the electrical and optical properties of the transparent conducting oxide β-Ga2O3 was investigated using hybrid functionals.
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High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
Akito Kuramata,Kimiyoshi Koshi,Shinya Watanabe,Yu Yamaoka,Takekazu Masui,Shigenobu Yamakoshi +5 more
TL;DR: In this article, an etch pit observation revealed that the dislocation density was on the order of 103 cm−3 and the effective donor concentration (N d − N a) was governed by the Si concentration.
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Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method
TL;DR: In this paper, the successful growth of 2-in. β-Ga2O3 crystals by the edge-defined, film fed growth (EFG) method was demonstrated, and the optimization of growth conditions for larger single crystalline β-GA 2O3 is discussed in detail.