Journal ArticleDOI
Recent progress in the growth of β-Ga2O3 for power electronics applications
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In this article, a review article focuses on the growth of bulk and homoepitaxial β-Ga2O3, summarizing the research work carried out in this field and pointing out the strengths and the main challenges of different growth techniques.About:
This article is published in Materials Science in Semiconductor Processing.The article was published on 2017-10-01. It has received 160 citations till now.read more
Citations
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Journal ArticleDOI
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
TL;DR: In this article, the performance of high voltage rectifiers and enhancement-mode metal-oxide field effect transistors on Ga2O3 has been evaluated and shown to benefit from the larger critical electric field relative to either SiC or GaN.
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β-Ga2O3 for wide-bandgap electronics and optoelectronics
TL;DR: In this paper, a review of β-Ga2O3 at the research level that spans from the material preparation through characterization to final devices is presented, including material preparation (bulk crystals, epi-layers, surfaces), an exploration of optical, electrical, thermal and mechanical properties, as well as device design / fabrication with resulted functionality suitable for different fields of applications.
Journal ArticleDOI
β-Gallium oxide power electronics
Andrew J. Green,James A. Speck,Grace Xing,Peter Moens,Fredrik Allerstam,Krister Gumaelius,Thomas Neyer,Andrea Arias-Purdue,Vivek Mehrotra,Akito Kuramata,Kohei Sasaki,Shinya Watanabe,Kimiyoshi Koshi,John D. Blevins,Oliver Bierwagen,Sriram Krishnamoorthy,Kevin Lee,Aaron R. Arehart,Adam T. Neal,Shin Mou,Steven A. Ringel,Avinash Kumar,Ankit Sharma,Krishnendu Ghosh,Uttam Singisetti,Wenshen Li,Kelson D. Chabak,Kyle J. Liddy,Ahmad E. Islam,Siddharth Rajan,Samuel Graham,Sukwon Choi,Zhen Chen,Masataka Higashiwaki +33 more
TL;DR: This Roadmap presents the current state-of-the-art and future challenges in 15 different topics identified by a large number of people active within the gallium oxide research community to enhance the state-ofthe-art device performance and allow for efficient, high-power, commercially scalable microelectronic systems using the newest semiconductor platform.
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A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3
TL;DR: In this paper , a review of basic and transition metal conducting and semiconducting oxides is presented, with an emphasis on the crystal, electronic, and band structures of the oxides.
References
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Journal ArticleDOI
Temperature-dependent thermal conductivity in Mg-doped and undoped $\beta$-$\mathrm{Ga_2O_3}$ bulk-crystals
TL;DR: In this paper, the thermal conductivity along the [100]-direction in Mg-doped electrical insulating and undoped semiconducting Czochralski-grown Ga2O_3 bulk crystals was measured by applying the electrical 3$\omega$-method.
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Origins of etch pits in β-Ga2O3(010) single crystals
Kenji Hanada,Tomoya Moribayashi,Kimiyoshi Koshi,Kohei Sasaki,Akito Kuramata,Osamu Ueda,Makoto Kasu +6 more
TL;DR: Hanada et al. as mentioned in this paper classified etch pits of various shapes into three-dimentional spaces in single Ga2O3(010) single crystal surfaces into three classes: type G, type E and type F.
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Defect characterization of β-Ga2O3 single crystals grown by vertical Bridgman method
TL;DR: In this article, the characteristics of structural defects observed on (100) wafers in β-Ga2O3 single crystals grown by directional solidification in a vertical Bridgman furnace were studied in terms of crystal growth conditions.
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Infrared Reflectance and Electrical Conductivity of ?-Ga2O3
TL;DR: In this paper, an undoped β-Ga 2 O 3 single crystal was grown by the floating zone technique under several mixtures of N 2 and O 2 gas and 2 atm pressure.