Journal ArticleDOI
Resonant-tunneling hot electron transistor (RHET)
TLDR
The InGaAs-based hot electron transistors (RHET) as discussed by the authors achieved a peak-to-valley ratio of 19.3, with a maximum of 21.7.Abstract:
This paper reviews our current activities in hot electron transistors, and then describes recent advances in the RHET technology using InGaAs-based materials. The RHET's emitter common current gain is typically 10 to 17, with a maximum of 25, which is about four times greater than that of a GaAs-based RHET. The collector current peak-to-valley ratio reaches 19.3, with a maximum of 21.7, eight times that of the GaAs-based RHET. These are followed by theoretical and experimental analyses of the RHET's DC performance. It is found that theoretical and experimental results do not agree for the GaAs-based RHET but agree well for the InGaAs-based RHET.read more
Citations
More filters
Journal ArticleDOI
Digital circuit applications of resonant tunneling devices
TL;DR: In this article, the authors describe new bistable logic families using resonant tunneling diodes (RTD's) in conjunction with high-performance III-V devices such as heterojunction bipolar transistors (HBT's) and modulation doped field effect transistors(MODFET's) for binary and multiple-valued logic.
Journal ArticleDOI
Hot Electron Transistor with van der Waals Base-Collector Heterojunction and High-Performance GaN Emitter
Ahmad Zubair,Amirhasan Nourbakhsh,Jin-Yong Hong,Meng Qi,Yi Song,Debdeep Jena,Jing Kong,Mildred S. Dresselhaus,Tomas Palacios +8 more
TL;DR: It is demonstrated for the first time the operation of a high-performance HET using a graphene/WSe2 van der Waals (vdW) heterostructure as a base-collector barrier and the resulting device with a GaN/AlN heterojunction as emitter exhibits record values among graphene-base HETs.
Journal ArticleDOI
Optical studies of perpendicular transport in semiconductor superlattices
TL;DR: In this paper, a review of optical studies of perpendicular transport of carriers in superlattices is presented, where it is shown that the transport for both electrons and holes indeed proceeds by extended Bloch states of the minibands in short-period super-attoms.
Journal ArticleDOI
Multiple-valued signed digit adder using negative differential resistance devices
A.F. Gonzalez,Pinaki Mazumder +1 more
TL;DR: The proposed SDFA circuit can perform addition of two arbitrary size binary numbers in constant time without the need for either carry propagation or carry look-ahead, and is somewhat superior to other multivalued redundant arithmetic circuits reported in the literature.
Journal ArticleDOI
Time‐resolved measurement of tunneling and energy relaxation of hot electrons in GaAs/AlGaAs double quantum well structures
TL;DR: In this article, the authors measured the tunneling and cooling times of photoexcited hot electrons in AlGaAs/GaAs double (one narrow and the other wide) quantum well structures using photoluminescence excitation correlation spectroscopy.
References
More filters
Journal ArticleDOI
A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
TL;DR: In this article, a hot electron transistor (RHET) is demonstrated in which electrons are injected from emitter to base by resonant-tunneling through a quantum well, and are near-ballistically transferred to a collector.
Journal ArticleDOI
Velocity‐field characteristics of GaAs with Γc6‐Lc6‐Xc6 conduction‐band ordering
TL;DR: In this article, Monte Carlo calculations of velocity-field characteristics for GaAs using the recent experimental conduction-band ordering of Aspnes, which places the Lc6(111) conduction−band minima lower in energy than the Xc6 (100) minima.
Journal ArticleDOI
Alloy scattering and high field transport in ternary and quaternary III–V semiconductors
TL;DR: In this article, a technique is described for the estimation of the influence of random potential alloy scattering on the high field transport properties of quaternary III-V semiconductors obtained by Monte Carlo simulation.
Journal ArticleDOI
Tunneling hot electron transfer amplifiers (theta): Amplifiers operating up to the infrared
TL;DR: In this article, a family of novel three-terminal devices which rely on the transfer of a quasi-monoenergetic hot electron beam through a thin base is described.
Journal ArticleDOI
Self‐consistent analysis of resonant tunneling current
TL;DR: In this article, the authors investigated the currentvoltage characteristics of the double barrier, resonant tunneling structure, using a self-consistent method, and noted the significance of the effects of band bending and buildup of space charge in the quantum well.