Journal ArticleDOI
Reversible light coalescence phenomena of Si photo-emitters under stressing at low breakdown currents
TLDR
In this paper, the authors investigated the phenomenon of light coalescence in Si light emitter during avalanche breakdown and explained the difference in light coalescent behavior for large and small values of DC excitations and the reversibility of the phenomenon using hydrogen migration model.Abstract:
The phenomenon of light coalescence in Si light emitter during avalanche breakdown is investigated. DC stressing results in light coalescence for low values of current ( 40 mA) do not show light coalescence. The light coalescence phenomenon can be reversed when emitters are subjected to higher levels of currents. The purpose of this paper is to explain the difference in light coalescence behavior for large and small values of DC excitations and the reversibility of the phenomenon using hydrogen migration model.read more
Citations
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Journal ArticleDOI
Integrated Silicon Directly Modulated Light Source Using p-Well in Standard CMOS Technology
TL;DR: A new MOS-like structure utilizing deep p-well is presented, and compared with conventional planar p-n junction diode at visible wavelength and avalanching bias conditions, with experimental results for a reverse-bias region showing light modulation.
Journal ArticleDOI
High-speed light Modulation in avalanche breakdown mode for Si diodes
TL;DR: In this paper, the limiting speed of light emission from a p-n junction in the forward bias region is determined by the transit time of the minority carriers across the junction during the filament formation of breakdown currents, which is demonstrated by simulation of the propagation of a shockwave-like pattern in the breakdown field.
Journal ArticleDOI
Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC*
Yanxu Chen,Xu Dongliang,Kaikai Xu,Zhang Ning,Siyang Liu,Jianming Zhao,Qian Luo,Lukas W. Snyman,Jacobus W. Swart +8 more
TL;DR: In this article, a transient model to shorten the carrier lifetime in the high electric field region by accumulating carriers in both p and n type regions was presented, where the light is emitted as spatial sources by the defects located at the p-n junction of the reverse-biased diode.
Journal ArticleDOI
Analysis of simulation of multiterminal electro-optic modulator based on p-n junction in reverse bias
TL;DR: In this article, a study of a silicon metal oxide semiconductor (MOS)-type light-emitting device (LED) in which the p-n junction works under a reverse bias and the gate voltage is applied to modulate the electric field distribution from the p+ region through the n region is presented.
Journal ArticleDOI
High carrier injection for all-silicon laser
TL;DR: In this article, a hot carrier injection was used for the creation of a low dimensions defect layer near the emitter-base interface of bipolar transistors, where new energy levels were induced together with a potential barrier.
References
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Journal ArticleDOI
Silicon-based visible light-emitting devices integrated into microelectronic circuits
Karl D. Hirschman,Karl D. Hirschman,Leonid Tsybeskov,Siddhartha P. Duttagupta,Philippe M. Fauchet,Philippe M. Fauchet +5 more
TL;DR: In this article, the authors demonstrate the successful integration of silicon-based visible light-emitting devices into a standard bipolar microelectronic circuit by exploiting the thermal and chemical stability of porous silicon.
Journal ArticleDOI
Deactivation of the boron acceptor in silicon by hydrogen
TL;DR: In this paper, two new experiments were presented which suggest that the "bulk-compensating donor" phenomenon observed in pSi is probably a deactivation process of the boron acceptor by hydrogen with the formation of a B−H+ pair.
Journal ArticleDOI
A multimechanism model for photon generation by silicon junctions in avalanche breakdown
TL;DR: In this paper, a multimechanism model fitting measured spectra and spectra measured by other researchers is presented and justified, and the success of the model indicates that indirect recombination of electrons and holes is the dominant emission mechanism below the light intensity peak (/spl sim/1.8-2.0 eV), that indirect intraband recombination dominates at intermediate energies up to /spl sim 2.3 eV, and that direct interband recombination between high-field populations of carriers near k=0 dominates above 2.4-3.4 eV
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Zener and avalanche breakdown in silicon alloyed p-n junctions—I: Analysis of reverse characteristics☆
TL;DR: In this article, the reverse I-V characteristics of silicon alloyed junctions with breakdown voltage in the range of about 2-60 V have been studied in the light of Zener and avalanche breakdown mechanisms.
Journal ArticleDOI
Avalanche degradation of h FE
TL;DR: In this paper, the authors show that the degradation of low current h FE as a result of avalanching the emitter-base junction of a silicon planar transistor is explinable by an increase in surface recombination velocity in and around the metallurgical junction.