Journal ArticleDOI
Self-organized titanium oxide nano-channels for resistive memory application
A. Barman,C. P. Saini,Pranab Kumar Sarkar,Biswarup Satpati,Satyaranjan Bhattacharyya,D. Kabiraj,D. Kanjilal,Sankar Dhar,Aloke Kanjilal +8 more
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TLDR
In this paper, the efficacy of 50'keV Ar+ion irradiation to achieve self-organized nano-channel based structures at a threshold fluence of 5'×'1016'ions/cm2 at ambient temperature is presented.Abstract:
Towards developing next generation scalable TiO2-based resistive switching (RS) memory devices, the efficacy of 50 keV Ar+-ion irradiation to achieve self-organized nano-channel based structures at a threshold fluence of 5 × 1016 ions/cm2 at ambient temperature is presented. Although x-ray diffraction results suggest the amorphization of as-grown TiO2 layers, detailed transmission electron microscopy study reveals fluence-dependent evolution of voids and eventual formation of self-organized nano-channels between them. Moreover, gradual increase of TiO/Ti2O3 in the near surface region, as monitored by x-ray photoelectron spectroscopy, establishes the upsurge in oxygen deficient centers. The impact of structural and chemical modification on local RS behavior has also been investigated by current-voltage measurements in conductive atomic force microscopy, while memory application is manifested by fabricating Pt/TiO2/Pt/Ti/SiO2/Si devices. Finally, the underlying mechanism of our experimental results has been analyzed and discussed in the light of oxygen vacancy migration through nano-channels.read more
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Journal ArticleDOI
Multilevel programming in Cu/NiO y /NiO x /Pt unipolar resistive switching devices.
TL;DR: It was found that nonvolatile and stable resistance levels, especially the multiple low-resistance states of Cu/NiO y /NiO x /Pt memory devices, could be controlled by varying the compliance current.
Journal ArticleDOI
Impact of Self-Trapped Excitons on Blue Photoluminescence in TiO2 Nanorods on Chemically Etched Si Pyramids
C. P. Saini,A. Barman,Debosmita Banerjee,O. Grynko,S. Prucnal,Mukul Gupta,D. M. Phase,Anil K. Sinha,D. Kanjilal,Wolfgang Skorupa,Aloke Kanjilal +10 more
TL;DR: In this article, temperature-dependent photoluminescence (PL) of titanium oxide (TiO2) shows an evolution of blue emission when exposed to 50 keV Ar+ ions.
Journal ArticleDOI
Investigating the origins of high multilevel resistive switching in forming free Ti/TiO2−x-based memory devices through experiments and simulations
TL;DR: In this paper, the authors demonstrate at least six resistance states with distinct memory margin and promising temporal variability due to the gradual resistance switching pattern of TiO2−x-based RRAM devices.
Journal ArticleDOI
500 keV Ar 2+ ion irradiation induced anatase to brookite phase transformation and ferromagnetism at room temperature in TiO 2 thin films
TL;DR: Mohanty et al. as discussed by the authors studied the evolution of structure and magnetic properties after irradiating the TiO2 thin films with 500 keV Ar2+ ions and reported anatase to brookite phase transformation.
Journal ArticleDOI
Role of Oxygen Vacancy on the Hydrophobic Behavior of TiO2 Nanorods on Chemically Etched Si Pyramids
C. P. Saini,A. Barman,D. Das,Biswarup Satpati,Satyaranjan Bhattacharyya,D. Kanjilal,Alexey Ponomaryov,Sergei Zvyagin,Aloke Kanjilal +8 more
TL;DR: In this article, the authors investigated the hydrophobicity of self-assembled TiO2 nanorods on chemically etched Si pyramids by irradiating with 50 keV Ar+-ions at room temperature.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
SRIM – The stopping and range of ions in matter (2010)
TL;DR: SRIM as discussed by the authors is a software package concerning the stopping of ion/atom collisions, and individual interatomic potentials have been included for all ion and atom collisions in the SRIM package.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.