Journal ArticleDOI
Short channel amorphous In–Ga–Zn–O thin-film transistor arrays for ultra-high definition active matrix liquid crystal displays: Electrical properties and stability
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TLDR
In this article, the electrical properties and stability of ultra-high definition (UHD) amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) arrays with short channel (width/length = 12/3μm) were examined.Abstract:
The electrical properties and stability of ultra-high definition (UHD) amorphous In–Ga–Zn–O (a-IGZO) thin-film transistor (TFT) arrays with short channel (width/length = 12/3 μm) were examined. A-IGZO TFT arrays have a mobility of ∼6 cm2/V s, subthreshold swing (S.S.) of 0.34 V/decade, threshold voltage of 3.32 V, and drain current (Id) on/off ratio ofread more
Citations
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Journal ArticleDOI
Spontaneous Patterning of High-Resolution Electronics via Parallel Vacuum Ultraviolet.
Xuying Liu,Masayuki Kanehara,Chuan Liu,Kenji Sakamoto,Takeshi Yasuda,Jun Takeya,Takeo Minari,Takeo Minari +7 more
TL;DR: A spontaneous patterning technique via parallel vacuum ultraviolet is developed for fabricating large-scale, complex electronic circuits with 1 μm resolution with high contact resistance and high mobilities.
Journal ArticleDOI
Indium Tungsten Oxide Thin Films for Flexible High-Performance Transistors and Neuromorphic Electronics
Nidhi Tiwari,Mayank Rajput,Rohit Abraham John,Mohit Rameshchandra Kulkarni,Anh Chien Nguyen,Nripan Mathews +5 more
TL;DR: The high performance and stability of flexible TFTs obtained with IWO films demonstrate their promise for low-voltage electronic applications.
Journal ArticleDOI
Novel Tunnel-Contact-Controlled IGZO Thin-Film Transistors with High Tolerance to Geometrical Variability
TL;DR: These devices complete the portfolio of contact-controlled transistors, comprising devices with Schottky contacts, bulk barrier, or heterojunctions, and now, tunneling insulating layers, leading to new low-power, robust design approaches as large-scale fabrication techniques with sub-nanometer control mature.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Book
Fundamentals of Modern VLSI Devices
Yuan Taur,Tak H. Ning +1 more
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Journal ArticleDOI
Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
TL;DR: A review of the recent progress and major trends in the field of thin-film transistor (TFT) research involving the use of amorphous oxide semiconductors (AOS) is provided in this paper.
Journal ArticleDOI
Bias‐stress‐induced stretched‐exponential time dependence of charge injection and trapping in amorphous thin‐film transistors
Frank R. Libsch,Jerzy Kanicki +1 more
TL;DR: In this article, the threshold voltage instabilities in nitride/oxide dual gate dielectric amorphous silicon (a•Si:H) thin-film transistors are investigated as a function of stress time, stress temperature, and stress bias.