Journal ArticleDOI
Silicon MOS Optoelectronic Micro-Nano Structure Based on Reverse-Biased PN Junction
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This article is published in Physica Status Solidi (a).The article was published on 2019-04-01. It has received 131 citations till now. The article focuses on the topics: Silicon & p–n junction.read more
Citations
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Silver nanoparticles: various methods of synthesis, size affecting factors and their potential applications–a review
TL;DR: In this paper, the main target for these silver nanoparticles was not only to synthesize in nano range, but also require easy, eco-friendly and economical synthesis of the nanoparticles.
Journal ArticleDOI
Ultra-Broadband Mode Converter Using Cascading Chirped Long-Period Fiber Grating
TL;DR: In this paper, an ultra-broadband mode converter based on a cascade chirped long-period fiber grating (CLPFG) written in a two-mode fiber was proposed.
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High-Accuracy Robot Indoor Localization Scheme Based on Robot Operating System Using Visible Light Positioning
TL;DR: An indoor robot VLP localization system based on Robot Operating System (ROS) is presented for the first time, aiming at promoting the application of VLP in mature robotic system.
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L-phenylalanine-imprinted polydopamine-coated CdS/CdSe n-n type II heterojunction as an ultrasensitive photoelectrochemical biosensor for the PKU monitoring.
TL;DR: This work suggests that such L-Phe-imprinted polydopamine-coated Zn/CdS/ cdSe n-n heterojunction is greatly promising for being applied in photoelectrochemical biosensing with high photo-electron conversion efficiency.
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Fabrication and characterization of the stable Ag-Au-metal-organic-frameworks: An application for sensitive detection of thiabendazole
TL;DR: In this paper, a Raman-based method was developed to detect thyroid hormone imbalances and liver damage at high doses using metal-organic framework modified with inositol hexaphosphate (IP6).
References
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Journal ArticleDOI
Complete optical isolation created by indirect interband photonic transitions
Zongfu Yu,Shanhui Fan +1 more
TL;DR: It is shown here that a linear, broadband and non-reciprocal isolation can be accomplished by spatial–temporal refractive index modulations that simultaneously impart frequency and wavevector shifts during the photonic transition process.
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Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance
Shinichi Takagi,T. Iisawa,Tsutomu Tezuka,T. Numata,Shu Nakaharai,N. Hirashita,Yoshihiko Moriyama,Koji Usuda,Eiji Toyoda,Sanjeewa Dissanayake,Masato Shichijo,Ryosho Nakane,Satoshi Sugahara,Mitsuru Takenaka,Naoharu Sugiyama +14 more
TL;DR: In this article, the authors reviewed the recent approaches in realizing carrier-transport-enhanced CMOS, and the critical issues, fabrication techniques, and device performance of MOSFETs using three types of channel materials, Si (SiGe) with uniaxial strain, Ge-on-insulator (GOI), and III-V semiconductors, are presented.
Journal ArticleDOI
Thermionic emission and Gaussian transport of holes in a GaAs/AlxGa1-xAs multiple-quantum-well structure.
TL;DR: A modified thermionic emission model for time-resolved charge-carrier transport perpendicular to the layers of multiple quantum-well structures in an electric field agrees favorably with experiments performed for the case of holes and allows an accurate determination of the band offset.
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Electroluminescence of silicon nanocrystals in MOS structures
Giorgia Franzò,Alessia Irrera,Eduardo Ceretta Moreira,Maria Miritello,Fabio Iacona,Delfo Sanfilippo,G. Di Stefano,P.G. Fallica,Francesco Priolo +8 more
TL;DR: In this paper, the structural, electrical and optical properties of MOS devices were studied, where the dielectric layer consists of a substoichiometric SiOx (x 1000°C) to induce the separation of the Si and the SiO2 phases with the formation of Si nanocrystals embedded in the insulating matrix.
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Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs
David Esseni,Antonio Abramo +1 more
TL;DR: In this paper, a model for the remote Coulomb scattering (RCS) in ultrathin gate oxide MOSFETs due to ionized impurities in the polysilicon is presented.