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Single-photon emitting diode in silicon carbide.

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TLDR
The fabrication of bright single-photon emitting diodes that display fully polarized output, superior photon statistics, and stability in both continuous and pulsed modes, all at room temperature are demonstrated.
Abstract
Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide an ideal material to build such devices. Here, we demonstrate the fabrication of bright single-photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of >300 kHz) and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single-photon source is proposed. These results provide a foundation for the large scale integration of single-photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.

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Citations
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Journal ArticleDOI

Solid-state single-photon emitters

TL;DR: In this article, a review summarizes recent progress of single-photon emitters based on defects in solids and highlights new research directions, including photophysical properties of singlephoton emissions and efforts towards scalable system integration.
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Material platforms for spin-based photonic quantum technologies

TL;DR: In this paper, the authors highlight the progress in three leading material platforms: diamond, silicon carbide and atomically thin semiconductors, with a focus on applications in quantum networks.
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Atomically thin quantum light-emitting diodes.

TL;DR: The results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.
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A review on single photon sources in silicon carbide.

TL;DR: Key findings in single-photon generation from deep level defects in silicon carbide (SiC) are summarized and the significance of these individually addressable centers for emerging quantum applications is highlighted.
Journal ArticleDOI

Scalable quantum photonics with single color centers in silicon carbide

TL;DR: A scalable array of 4H-SiC nanopillars incorporating single silicon vacancy centers is developed, readily available to serve as efficient single photon sources or quantum bits interfaced with free-space or lensed-fiber optics.
References
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Journal ArticleDOI

Generalized Gradient Approximation Made Simple

TL;DR: A simple derivation of a simple GGA is presented, in which all parameters (other than those in LSD) are fundamental constants, and only general features of the detailed construction underlying the Perdew-Wang 1991 (PW91) GGA are invoked.
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Influence of the exchange screening parameter on the performance of screened hybrid functionals.

TL;DR: This work reexamines the effect of the exchange screening parameter omega on the performance of the Heyd-Scuseria-Ernzerhof (HSE) screened hybrid functional and recommends a new version of HSE with the screened parameter omega=0.11 bohr(-1) for further use.
Journal ArticleDOI

Electrically Driven Single-Photon Source

TL;DR: Electroluminescence from a single quantum dot within the intrinsic region of a p-i-n junction is shown to act as an electrically driven single-photon source for applications in quantum information technology.
Journal ArticleDOI

Coherent control of single spins in silicon carbide at room temperature

TL;DR: This study reports the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrates that single spins can be addressed at room temperature and shows coherent control of a single defect spin and finds long spin coherence times under ambient conditions.
Journal ArticleDOI

A room temperature single photon source in silicon carbide

TL;DR: In this article, the first observation of stable single photon sources in an electronic and photonic device-friendly material, silicon carbide (SiC), was reported, which is a viable material for implementing quantum communication, computation and light-emitting diode technologies.
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