Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction
M. Cubukcu,Olivier Boulle,Marc Drouard,Kevin Garello,Can Onur Avci,Ioan Mihai Miron,Juergen Langer,Berthold Ocker,Pietro Gambardella,Gilles Gaudin +9 more
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In this paper, the TMR effect was applied to a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its readout using the tunnelling magnetoresistance (TMR) effect.Abstract:
We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density 5 × 1011 A/m2 in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell.read more
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TL;DR: In this paper, the authors acknowledge support from the EU FET Open RIA Grant No 766566, the Ministry of Education of the Czech Republic Grant No LM2015087 and LNSM-LNSpin.
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References
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Spin-torque switching with the giant spin hall effect of tantalum
TL;DR: In this paper, a giant spin Hall effect (SHE) in β-tantalum was shown to generate spin currents intense enough to induce spin-torque switching of ferromagnets at room temperature.
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Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection
Ioan Mihai Miron,Kevin Garello,Gilles Gaudin,Pierre-Jean Zermatten,Marius V. Costache,Stéphane Auffret,S. Bandiera,Bernard Rodmacq,Alain Schuhl,Pietro Gambardella +9 more
TL;DR: To prove the potential of in-plane current switching for spintronic applications, this work constructs a reprogrammable magnetic switch that can be integrated into non-volatile memory and logic architectures.
Journal Article
Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection
Kevin Garello,Ioan Mihai Miron,Gilles Gaudin,Pierre-Jean Zermatten,Marius V. Costache,Stéphane Auffret,Sebastien Bandera,B. Rodmacq,Alain Schuhl,Pietro Gambardella +9 more
TL;DR: In this article, the authors demonstrate switching of a perpendicularly magnetized cobalt dot driven by in-plane current injection at room temperature, which is composed of a thin cobalt layer with strong perpendicular magnetic anisotropy and Rashba interaction induced by asymmetric platinum and AlOx interface layers.
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Current-driven dynamics of chiral ferromagnetic domain walls
TL;DR: This work directly confirms the DW chirality and rigidity by examining current-driven DW dynamics with magnetic fields applied perpendicular and parallel to the spin spiral and resolves the origin of controversial experimental results.
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Spin-Torque Ferromagnetic Resonance Induced by the Spin Hall Effect
TL;DR: In this article, the spin Hall effect in a thin film with strong spin-orbit scattering can excite magnetic precession in an adjacent ferromagnetic film, and the ratio of these two signals allows a quantitative determination of the spin current and spin Hall angle.