Journal ArticleDOI
Structural and optical properties of In(Ga)As∕GaAs quantum dots treated by partial capping and annealing
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TLDR
In this article, the emission energy of self-assembled InAs∕GaAs(001) quantum dots (QDs) was tuned by partial GaAs capping and annealing.Abstract:
We tune the emission energy of self-assembled InAs∕GaAs(001) quantum dots (QDs) by partial GaAs capping and annealing. During the annealing step, the surface above the QDs flattens substantially. The existence of In-rich cores below the thin GaAs cap is directly probed by using in situ selective etching. The blueshift of the QD emission energy, resulting from the reduction of the QD height, is tuned by increasing the annealing time or by reducing the capping layer thickness. For long annealing times, the ensemble photoluminescence (PL) displays a multipeak behavior which is attributed to monolayer fluctuations of the QD height. Single-QD micro-PL shows that the quality of the QDs can be improved by desorbing the In accumulated around the QDs by performing the annealing at high substrate temperatures.read more
Citations
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Triggered polarization-entangled photon pairs from a single quantum dot up to 30 K
TL;DR: In this paper, a high-resolution detection technique is introduced which allows us to accurately determine the fine structure in the photoluminescence emission and therefore select appropriate QDs for quantum state tomography.
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Advanced quantum dot configurations
TL;DR: In this paper, the authors present an overview on approaches currently employed to fabricate advanced quantum dot configurations by epitaxial growth, and discuss a promising approach to realize quantum dot crystals with controlled spatial and optical properties.
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GaAs integrated quantum photonics: Towards compact and multi-functional quantum photonic integrated circuits
TL;DR: In this article, the authors review the recent progress in the development of the key building blocks for gallium arsenide quantum photonics and the perspectives for their full integration in a fully functional and densely integrated quantum photonic circuit.
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Self-Assembled Quantum Dot Molecules
TL;DR: A comprehensive overview of the development and current stage of the research on self-assembled QDMs composed of vertically or laterally aligned QDs is provided in this article, where the authors highlight some recent milestone works and point out the challenges and future directions in the field.
Journal ArticleDOI
Single photon emission from a site-controlled quantum dot-micropillar cavity system
C. Schneider,Tobias Heindel,A. Huggenberger,P. Weinmann,C. Kistner,M. Kamp,Stephan Reitzenstein,Sven Höfling,Alfred Forchel +8 more
TL;DR: In this paper, the authors demonstrate the deterministic integration of single site-controlled quantum dots (SCQDs) into micropillar cavities using cross markers for precise SCQD-cavity alignment.
References
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Journal ArticleDOI
A Quantum Dot Single-Photon Turnstile Device
Peter Michler,Alper Kiraz,Christoph Becher,Winston V. Schoenfeld,Pierre Petroff,Lidong Zhang,E. L. Hu,Atac Imamoglu,Atac Imamoglu +8 more
TL;DR: Using pulsed laser excitation of a single quantum dot, a single- photon turnstile device that generates a train of single-photon pulses was demonstrated.
Journal ArticleDOI
Coupled quantum dots as quantum gates
TL;DR: In this paper, a quantum-gate mechanism based on electron spins in coupled semiconductor quantum dots is considered and the magnetization and the spin susceptibilities of the coupled dots are calculated.
Journal ArticleDOI
Intermixing and shape changes during the formation of InAs self-assembled quantum dots
Jorge M. Garcia,Gilberto Medeiros-Ribeiro,K. H. Schmidt,T. Ngo,J.-L. Feng,Axel Lorke,Jörg P. Kotthaus,Pierre Petroff +7 more
TL;DR: In this article, the initial stages of GaAs overgrowth over self-assembled coherently strained InAs quantum dots (QDs) are studied, and it is shown that surface QDs with 5 nm or more GaAs are remarkably insensitive to surface recombination effects.
Journal ArticleDOI
Size and shape engineering of vertically stacked self-assembled quantum dots
TL;DR: In this article, a new procedure for the growth of stacked self-assembled quantum dot layers is described, where the main effect is to convert the quantum dot population into a population of quantum disks of approximately equal height.
Journal ArticleDOI
Interplay of Rabi oscillations and quantum interference in semiconductor quantum dots.
TL;DR: By performing wave packet interferometry in the nonlinear excitation regime, a new type of quantum interference phenomenon is discovered, resulting from the interplay between Rabi oscillation and quantum interference.