Journal ArticleDOI
Synthesis of metastable epitaxial zinc‐blende‐structure AlN by solid‐state reaction
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TLDR
In this paper, a metastable zinc-blende-structure β-AlN was synthesized by the solid-state reaction between single-crystal Al(001) and TiN(001), grown on MgO(001).Abstract:
Epitaxial metastable zinc‐blende‐structure β‐AlN was synthesized by the solid‐state reaction between single‐crystal Al(001) and TiN(001) layers grown on MgO(001) by ultrahigh vacuum magnetron sputter deposition. At an annealing temperature Ta=600 °C, the interaction proceeded according to the following overall reaction: 4Al+TiN→Al3Ti+AlN, in which β‐AlN was formed pseudomorphically between cubic TiN and tetragonal Al3Ti layers. The lattice constant of β‐AlN was found to be 0.438 nm, which corresponds to a 3.3% lattice mismatch with the underlying TiN layer.read more
Citations
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Journal ArticleDOI
Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
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Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TL;DR: In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.
Journal ArticleDOI
Thermal stability of nitride thin films
TL;DR: In this paper, a review of the thermal stability of state-of-the-art transition metal nitride thin films synthesized by physical vapour deposition techniques is presented, where the authors show that they are successfully applied as well.
Journal ArticleDOI
Heteroepitaxial wurtzite and zinc‐blende structure GaN grown by reactive‐ion molecular‐beam epitaxy: Growth kinetics, microstructure, and properties
TL;DR: In this paper, a combination of in situ reflection high-energy electron diffraction, double-crystal x-ray diffraction and cross-sectional transmission electron microscopy was used to determine the film/substrate epitaxial relationships.
Journal ArticleDOI
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
Patrick Rinke,Momme Winkelnkemper,Abdallah Qteish,Dieter Bimberg,Jörg Neugebauer,Matthias Scheffler +5 more
TL;DR: In this paper, the authors derived consistent sets of band parameters such as band gaps, crystal field splittings, band-gap deformation potentials, effective masses, and Luttinger and EP parameters for AlN, GaN, and InN in the zinc-blende and wurtzite phases employing many-body perturbation theory in the G0W0 approximation.
References
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Book
Thermochemical properties of inorganic substances
Ihsan Barin,Ottmar Knacke +1 more
TL;DR: In this paper, a volume of tables conveying the thermochemical parameters of more than 2000 substances, cover enthalpy, entropy, chemical potential and Planck's function, and commentaries on the chemical reactions of the relevant component and indications of stability/metastability.
Journal ArticleDOI
Thermal stability of indium nitride at elevated temperatures and nitrogen pressures
TL;DR: In this paper, the authors investigated the pressure-temperature relations of indium nitride at moderate temperatures and nitrogen pressures and found that the dissociation pressure rises steeply as a function of temperature.
Journal ArticleDOI
The optical absorption edge of single‐crystal AlN prepared by a close‐spaced vapor process
P. B. Perry,R. F. Rutz +1 more
TL;DR: In this paper, the optical absorption edge was measured at 300 K and for the first time at low temperature (5 K) and a value of 6.28 eV was found to be the best value of Eg(5 K).
Journal ArticleDOI
Stability of the Wurtzite Structure
TL;DR: In this article, a simple qualitative model is proposed to account for the variability in the ratio of the ratio from the ideal value of 1.633 to the true value of 0.1%.
Journal ArticleDOI
Low‐energy ion irradiation during film growth for reducing defect densities in epitaxial TiN(100) films deposited by reactive‐magnetron sputtering
TL;DR: In this paper, the defect structure in epitaxial TiN(100) films as a function of the growth temperature (Ts=550-850 C) and negative substrate bias (Vs=0-500 V) applied during reactive magnetron sputter deposition onto cleaved MgO substrates was studied.
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