Journal ArticleDOI
Temperature sensors and voltage references implemented in CMOS technology
TLDR
It is shown that bipolar substrate transis- tors are very suited to be applied to generate the basic and PTAT voltages and dynamic element matching and auto-calibration can solve the problems related to mismatching of components and noise.Abstract:
This paper reviews the concepts, opportunities and limitations of temperature sensors and voltage references realized in CMOS technology. It is shown that bipolar substrate transis- tors are very suited to be applied to generate the basic and PTAT voltages. Furthermore, it is shown that dynamic element matching and auto-calibration can solve the problems related to mismatching of components and noise. The effects of mechan- ical stress are a major source of inaccuracy. In CMOS technology, the mechanical-stress effects are small, as compared to those in bipolar technology. It is concluded that, with low-cost CMOS tech- nolog, rather accurate voltage references and temperature sensors can be realized.read more
Citations
More filters
Journal ArticleDOI
A CMOS smart temperature sensor with a 3/spl sigma/ inaccuracy of /spl plusmn/0.1/spl deg/C from -55/spl deg/C to 125/spl deg/C
TL;DR: In this paper, a low-cost temperature sensor with on-chip sigma-delta ADC and digital bus interface was realized in a 0.5 /spl mu/m CMOS process.
Journal ArticleDOI
Power and temperature control on a 90-nm Itanium family processor
R. McGowen,C. Poirier,Christopher J. Bostak,James S. Ignowski,M. Millican,W.H. Parks,S. Naffziger +6 more
TL;DR: This paper describes the embedded feedback and control system on a 90-nm Itanium family processor, code-named Montecito, that maximizes performance while staying within a target power and temperature envelope and presents measured results that show a 31% reduction in power for only a 10% drop in frequency.
Proceedings ArticleDOI
A 1.2V 10µW NPN-based temperature sensor in 65nm CMOS with an inaccuracy of ±0.2°C (3s) from −70°C to 125°C
Fabio Sebastiano,Lucien J. Breems,Kofi A. A. Makinwa,Salvatore Drago,Domine M. W. Leenaerts,Bram Nauta +5 more
TL;DR: This paper describes a temperature sensor realized in a 65nm CMOS process with a batch-calibrated inaccuracy of ±0.5°C (3s) and a trimmed inaccuracy from −70°C to 125°C that represents a 10-fold improvement in accuracy compared to other deep-submicron temperature sensors.
Journal ArticleDOI
Precision temperature measurement using CMOS substrate pnp transistors
TL;DR: In this article, the authors analyzed the nonidealities of temperature sensors based on substrate pnp transistors and showed how their influence can be minimized by taking the temperature dependency of the effective emission coefficient into account.
Journal ArticleDOI
A Time-Domain SAR Smart Temperature Sensor With Curvature Compensation and a 3σ Inaccuracy of −0.4°C ∼ +0.6°C Over a 0°C to 90°C Range
TL;DR: This paper describes a time-domain temperature sensor based on a successive approximation algorithm that achieves the best ever accuracy among inverter-delay-based smart temperature sensors.
References
More filters
Journal ArticleDOI
New concepts for smart signal processors and their application to PSD displacement transducers
TL;DR: In this article, general ideas for the systematic design of smart sensors and processors are presented, and their consequent and systematic application has been shown to result in novel, simple and accurate processors.
Journal ArticleDOI
A temperature-stabilized SOI voltage reference based on threshold voltage difference between enhancement and depletion NMOSFET's
Ho-Jun Song,Choong-Ki Kim +1 more
TL;DR: In this paper, a temperature-stabilized silicon-on-insulator (SOI) voltage reference is presented based on the threshold voltage difference between enhancement and depletion SOI NMOSFETs that have the same channel doping concentration but of opposite type.
Journal ArticleDOI
A 300/spl deg/C dynamic-feedback instrumentation amplifier
TL;DR: In this article, the authors proposed an accurate and long-term-stable instrumentation amplifier for downhole oil well applications using dynamic feedback, which can achieve an accuracy of only a few ppm per year.
Integrated circuits and components for bandgap references and temperature transducers
TL;DR: In this paper, an analytical method for the calculation of Vg0 and rj from values of the base emitter voltage or the bandgap reference voltage at different temperatures is presented.
Book ChapterDOI
Concepts for bandgap references and voltage measurement systems
TL;DR: This paper deals with the temperature dependence of the I C (V BE ) characteristics of bipolar transistors, and methods to compensate for this temperature dependence for application in accurate bandgap References.