Journal ArticleDOI
Temperature sensors and voltage references implemented in CMOS technology
TLDR
It is shown that bipolar substrate transis- tors are very suited to be applied to generate the basic and PTAT voltages and dynamic element matching and auto-calibration can solve the problems related to mismatching of components and noise.Abstract:
This paper reviews the concepts, opportunities and limitations of temperature sensors and voltage references realized in CMOS technology. It is shown that bipolar substrate transis- tors are very suited to be applied to generate the basic and PTAT voltages. Furthermore, it is shown that dynamic element matching and auto-calibration can solve the problems related to mismatching of components and noise. The effects of mechan- ical stress are a major source of inaccuracy. In CMOS technology, the mechanical-stress effects are small, as compared to those in bipolar technology. It is concluded that, with low-cost CMOS tech- nolog, rather accurate voltage references and temperature sensors can be realized.read more
Citations
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Book ChapterDOI
Mechanical Transducers: Cantilevers, Acoustic Wave Sensors, and Thermal Sensors
TL;DR: In this paper, the authors describe a class of sensors that are sensitive to changes in mechanical properties; popular mechanical sensors such as cantilevers and acoustic sensors play an important role in molecular detection.
Journal ArticleDOI
An ultra-compact and low-power oven- controlled crystal oscillator design for precision timing applications
TL;DR: The OCXO package size can be reduced significantly with this design, because the resonator does not require a separate package and most of the circuitry is integrated on a single CMOS chip, and other characteristics such as power consumption and warm-up time are improved.
Proceedings ArticleDOI
Temperature effect on I-V characteristics of Si nanowire transistor
Yasir Hashim,Othman Sidek +1 more
TL;DR: In this paper, the temperature effect on silicon nanowire transistor and the possibility of using it as a temperature nanosensor was investigated using a MuGFET simulation tool to investigate temperature characteristics.
Proceedings Article
A CMOS temperature-to-frequency converter with an inaccuracy of less than ±0.5 °C (3a) from -40°C to 105 °C
TL;DR: In this paper, a temperature-to-frequency converter (TFC) implemented in a standard CMOS process is described, whose output frequency is determined by the phase-shift of an electrothermal filter, which consists of a heater and a tempera-ture sensor realized in the substrate of a standard chip.
Journal ArticleDOI
A ±36-A Integrated Current-Sensing System With a 0.3% Gain Error and a 400- $\mu \text{A}$ Offset From −55 °C to +85 °C
TL;DR: This paper presents an integrated shunt-based current-sensing system (CSS) capable of handling ±36-A currents, the highest ever reported, and achieves a 0.3% gain error and a 400-tex-math notation="LaTeX" offset, which is significantly better than the state-of-the-art systems.
References
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An integral charge control model of bipolar transistors
H.K. Gummel,H. C. Poon +1 more
TL;DR: A compact model of bipolar transistors suitable for network analysis computer programs is presented, through the use of a new charge control relation linking junction voltages, collector current, and base charge, which substantially exceeds that of existing models of comparable complexity.
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Thermal sensors based on transistors
TL;DR: In this article, the authors present various methods of utilizing bipolar transistors and integrated circuits as temperature transducers and compare the accuracy, stability and calibration problems of different transducers compared with each other.
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A CMOS voltage reference
Yannis Tsividis,R.W. Ulmer +1 more
TL;DR: A method for developing a reference voltage in CMOS integrated circuits is described, and the principle of the suggested voltage reference is explained and the final implementation is presented.
Journal ArticleDOI
A new NMOS temperature-stable voltage reference
TL;DR: In this paper, an NMOS voltage reference was developed that exhibits extremely low drift with temperature, which is based on the difference between the gate/source voltages of enhancement and depletion-mode NMOS transistors.