Journal ArticleDOI
Temperature sensors and voltage references implemented in CMOS technology
TLDR
It is shown that bipolar substrate transis- tors are very suited to be applied to generate the basic and PTAT voltages and dynamic element matching and auto-calibration can solve the problems related to mismatching of components and noise.Abstract:
This paper reviews the concepts, opportunities and limitations of temperature sensors and voltage references realized in CMOS technology. It is shown that bipolar substrate transis- tors are very suited to be applied to generate the basic and PTAT voltages. Furthermore, it is shown that dynamic element matching and auto-calibration can solve the problems related to mismatching of components and noise. The effects of mechan- ical stress are a major source of inaccuracy. In CMOS technology, the mechanical-stress effects are small, as compared to those in bipolar technology. It is concluded that, with low-cost CMOS tech- nolog, rather accurate voltage references and temperature sensors can be realized.read more
Citations
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Journal ArticleDOI
Oxadiazole Based Polyether as Sensitive Films for Ratiometric Optical Temperature Detection
TL;DR: A new type of polymer, based on the oxadiazole group, has been tested as indicator material for a ratiometric photoluminescence and optical reflection based temperature sensor in the temperature range between 30°C and 60°C, and it has been proposed to use a simple polynomial fit to the temperature versus peak amplitude relation.
Journal ArticleDOI
A Microchip Integrated Sensor for the Monitoring of High Concentration Photo-voltaic Solar Modules
F. G. Della Corte,Giuseppe Cocorullo,Pasquale Corsonello,Corrado Felini,Massimo Merenda,Stefania Perri,G. Borelli,M. Carpanelli,D. Verdilio +8 more
TL;DR: In this paper, a CMOS sensor fabricated in 0.35μm technology was designed for the monitoring of high concentration photo-voltaic (HCPV) modules, specifically designed for monitoring temperature and illumination.
Book ChapterDOI
Wireless CMOS Bio-medical SoCs for DNA/Protein/Glucose Sensing
Shey-Shi Lu,Hsiao-Chin Chen +1 more
TL;DR: In this paper, the design concepts of cantilever-based DNA sensors, poly-silicon nanowire-based protein/DNA sensors, a hydrogel-based glucose sensor, an ISFET-based pH sensor, and a bandgap-reference-based temperature sensor are discussed.
Book ChapterDOI
The Voltage-Mode Approach in Sensor Interfaces Design
TL;DR: In this article, different VM readout circuit solutions for resistive, capacitive and temperature sensors are described and implemented as discrete element PCBs, using commercial components and sometimes, in the case of integrated circuit design, with LV LP characteristics, in a standard CMOS technology.
Proceedings ArticleDOI
Temperature sensors and measurements to test analogue circuits: questions and answers
Josep Altet,Antonio Rubio,Ferran Reverter,Xavier Perpiñà,Xavier Aragones,Xavier Jordà,Miquel Vellvehi,Diego Mateo +7 more
TL;DR: This paper is to introduce temperature measurements and temperature sensors to test analog circuits from the highest level of abstraction and present some of the possibilities of temperature sensors and measurements to test integrated circuits in general, analog in particular.
References
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TL;DR: A compact model of bipolar transistors suitable for network analysis computer programs is presented, through the use of a new charge control relation linking junction voltages, collector current, and base charge, which substantially exceeds that of existing models of comparable complexity.
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A CMOS voltage reference
Yannis Tsividis,R.W. Ulmer +1 more
TL;DR: A method for developing a reference voltage in CMOS integrated circuits is described, and the principle of the suggested voltage reference is explained and the final implementation is presented.
Journal ArticleDOI
A new NMOS temperature-stable voltage reference
TL;DR: In this paper, an NMOS voltage reference was developed that exhibits extremely low drift with temperature, which is based on the difference between the gate/source voltages of enhancement and depletion-mode NMOS transistors.