Journal ArticleDOI
Temperature sensors and voltage references implemented in CMOS technology
TLDR
It is shown that bipolar substrate transis- tors are very suited to be applied to generate the basic and PTAT voltages and dynamic element matching and auto-calibration can solve the problems related to mismatching of components and noise.Abstract:
This paper reviews the concepts, opportunities and limitations of temperature sensors and voltage references realized in CMOS technology. It is shown that bipolar substrate transis- tors are very suited to be applied to generate the basic and PTAT voltages. Furthermore, it is shown that dynamic element matching and auto-calibration can solve the problems related to mismatching of components and noise. The effects of mechan- ical stress are a major source of inaccuracy. In CMOS technology, the mechanical-stress effects are small, as compared to those in bipolar technology. It is concluded that, with low-cost CMOS tech- nolog, rather accurate voltage references and temperature sensors can be realized.read more
Citations
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Proceedings ArticleDOI
A ±5A battery current sensor with ±0.04% gain error from −55°C to +125°C
TL;DR: A battery current sensor that consists of a calibrated 10mΩ shunt resistor, and a chip comprising a switched-capacitor (SC) ΔΣ ADC and a bandgap reference (BGR) that can digitize bi-directional currents is described.
Proceedings ArticleDOI
CMOS smart temperature sensors for RFID applications
Juan P. Brito,Alain Rabaeijs +1 more
TL;DR: An overview of the capabilities and different architectures for integrated temperature sensors in RFID tags using CMOS technology is presented and measurement results of a test structure based on a potential proportional to absolute temperature (Vptat) fabricated in deep-submicronCMOS technology are presented.
Proceedings ArticleDOI
A Fully Digital Low Cost Time Domain Smart Temperature Sensor with Extremely Tiny Size
TL;DR: In this article, a fully digital smart temperature sensor without any full-custom device is proposed for painless VLSI or SOC on-chip integrations, which is processed thoroughly in time domain instead of conventional voltage or current domain.
CMOS bandgap references and temperature sensors and their applications
TL;DR: In this article, the authors investigated the possibility to fabricate high-precision bandgap references and temperature sensors in low-cost CMOS technology, the electrical characteristics of substrate bipolar pnp transistors have been investigated over a wide temperature range The measurement results of the IC(VBE, characteristics show that at a moderate current range, a good exponential relation between the base-emitter voltage and the collector current exists, and the negative correlation between the extracted parameters Vgo and is similar to that earlier reported for bipolar technology.
Journal ArticleDOI
Design of a temperature sensor with optimized noise-power performance
TL;DR: The design aspect of a BJT-based temperature sensor implemented in standard CMOS technology that is optimized for its noise-power performance is presented and a Resolution Figure of Merit (RFoM) of 3.2pJK2 has been achieved, which is the best reported result for BJT -based temperature sensors in the market.
References
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An integral charge control model of bipolar transistors
H.K. Gummel,H. C. Poon +1 more
TL;DR: A compact model of bipolar transistors suitable for network analysis computer programs is presented, through the use of a new charge control relation linking junction voltages, collector current, and base charge, which substantially exceeds that of existing models of comparable complexity.
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Thermal sensors based on transistors
TL;DR: In this article, the authors present various methods of utilizing bipolar transistors and integrated circuits as temperature transducers and compare the accuracy, stability and calibration problems of different transducers compared with each other.
Journal ArticleDOI
A CMOS voltage reference
Yannis Tsividis,R.W. Ulmer +1 more
TL;DR: A method for developing a reference voltage in CMOS integrated circuits is described, and the principle of the suggested voltage reference is explained and the final implementation is presented.
Journal ArticleDOI
A new NMOS temperature-stable voltage reference
TL;DR: In this paper, an NMOS voltage reference was developed that exhibits extremely low drift with temperature, which is based on the difference between the gate/source voltages of enhancement and depletion-mode NMOS transistors.