Open Access
The 3D Stacking Bipolar RRAM for High Density
Yi-Chung Chen,Hai Li,Wei Zhang,Robinson E. Pino +3 more
- Vol. 11, Iss: 5, pp 945
TLDR
In this article, two 3D stacking structures built upon bipolar RRAM crossbars are proposed to enable multilayer accesses while avoiding the overwriting induced by the cross-layer disturbance.Abstract:
For its simple structure, high density, and good scalability, the resistive random access memory (RRAM) has emerged as one of the promising candidates for large data storage in computing systems. Moreover, building up RRAM in a 3-D stacking structure further boosts its advantage in array density. Conventionally, multiple bipolar RRAM layers are piled up vertically separated with isolation material to prevent signal interference between the adjacent memory layers. The process of the isolation material increases the fabrication cost and brings in the potential reliability issue. To alleviate the situation, we introduce two novel 3-D stacking structures built upon bipolar RRAM crossbars that eliminate the isolation layers. The bigroup operation scheme dedicated for the proposed designs to enable multilayer accesses while avoiding the overwriting induced by the cross-layer disturbance is also presented. Our simulation results show that the proposed designs can increase the capacity of a memory island to 8K-bits (i.e., eight layers of 32 × 32 crossbar arrays) while maintaining the sense margin in the worst case configuration greater than 20% of the maximal sensing voltage.read more
Citations
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Journal ArticleDOI
Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey
Ee Wah Lim,Razali Ismail +1 more
TL;DR: In this article, the authors conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.
Journal ArticleDOI
RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study
Yexin Deng,Peng Huang,Bing Chen,Xiao-Lin Yang,Bin Gao,Juncheng Wang,Lang Zeng,Gang Du,Jinfeng Kang,Xiaoyan Liu +9 more
TL;DR: In this article, a simulation method is developed to investigate the critical issues correlated with the interaction between devices and the circuit, and an optimal design scheme for turn-on voltage and conductance of the selector is proposed based on the simulation.
Journal ArticleDOI
A Compact Memristor-Based Dynamic Synapse for Spiking Neural Networks
TL;DR: A Memristor-based dynamic (MD) synapse design with experiment-calibrated memristor models is proposed and a temporal pattern learning application was investigated to evaluate the use of MD synapses in spiking neural networks, under both spike-timing-dependent plasticity and remote supervised method learning rules.
Journal ArticleDOI
Crossbar-Based Memristive Logic-in-Memory Architecture
Georgios Papandroulidakis,Ioannis Vourkas,Angel Abusleme,Georgios Ch. Sirakoulis,Antonio Rubio +4 more
TL;DR: This paper proposes a crossbar-based in-memory parallel processing system in which, through the heterogeneity of the resistive cross-point devices, local information processing is achieved in a state-of-the-art ReRAM crossbar architecture with vertical group-accessed transistors as cross- point selector devices.
Journal ArticleDOI
Analysis of the row grounding technique in a memristor-based crossbar array
TL;DR: Analysis of the row grounding technique shows that increasing the number of rows can help reduce read latency and energy, in contrast to the case of capacitive memory arrays.
References
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