Open AccessJournal Article
[The 4th Thin Film and Surface Physics Division Award Speech] Methodology of thermoelectric power factor enhancement by controlling nanowire interface
Takafumi Ishibe,Atsuki Tomeda,Kentaro Watanabe,Yoshinari Kamakura,Nobuya Mori,Nobuyasu Naruse,Yutaka Mera,Yuichiro Yamashita,Yoshiaki Nakamura +8 more
TLDR
In this paper, the authors proposed a method for the power factor enhancement by introducing coherent homoepitaxial interfaces with controlled dopant concentration, which enables the quasiballistic transmission of high-energy carriers.Abstract:
The simultaneous realization of low thermal conductivity and high thermoelectric power factor in materials has long been the goal for the social use of high-performance thermoelectric modules. Nanostructuring approaches have drawn considerable attention because of the success in reducing thermal conductivity. On the contrary, enhancement of the thermoelectric power factor, namely, the simultaneous increase of the Seebeck coefficient and electrical conductivity, has been difficult. We propose a method for the power factor enhancement by introducing coherent homoepitaxial interfaces with controlled dopant concentration, which enables the quasiballistic transmission of high-energy carriers. The wavenumber of the high-energy carriers is nearly conserved through the interfaces, resulting in simultaneous realization of a high Seebeck coefficient and relatively high electrical mobility. Here, we experimentally demonstrate the dopant-controlled epitaxial interface effect for the thermoelectric power factor enhancement using our \"embedded-ZnO nanowire structure\" having high-quality nanowire interfaces. This presents the methodology for substantial power factor enhancement by interface carrier scattering.read more
Citations
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Probing of mechanical, optical and thermoelectric characteristics of double perovskites Cs2GeCl/Br6 by DFT method
TL;DR: The double perovskites halides are potential materials for renewable energy to meet the demands of the global energy shortage as discussed by the authors, and structural and thermodynamic stabilities of studied materials are ensured by the Goldsmith tolerance factor (0.86 and 0.91) and negative formation energy.
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High Thermoelectric Power Factor Realization in Si-Rich SiGe/Si Superlattices by Super-Controlled Interfaces.
Tatsuhiko Taniguchi,Takafumi Ishibe,Nobuyasu Naruse,Yutaka Mera,Md. Mahfuz Alam,Kentarou Sawano,Yoshiaki Nakamura +6 more
TL;DR: It is demonstrated that strain and atomic differences controlled by ultrathin layers can bring a breakthrough for realizing high-performance light-element-based thermoelectric films.
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Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled Si nanostructures
Shunya Sakane,Takafumi Ishibe,Tatsuhiko Taniguchi,Nobuyasu Naruse,Yutaka Mera,Takeshi Fujita,Md. Mahfuz Alam,Kentarou Sawano,Nobuya Mori,Yoshiaki Nakamura +9 more
TL;DR: In this article, the authors investigated carrier and phonon transports related to thermoelectric properties using absolutely-controlled Si nanostructures, namely Si films containing epitaxial nanodots (NDs).
Journal ArticleDOI
Low thermal conductivity in single crystalline epitaxial germanane films
TL;DR: In this article, the authors investigated thermal conductivity of epitaxial germanane films: stacked structure of hydrogenated germanenes, and showed that the films exhibited low out-of-plane thermal conductivities of 1.1 ± 0.3 W m−1 K−1.
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Carrier and phonon transport control by domain engineering for high-performance transparent thin film thermoelectric generator
Takafumi Ishibe,Atsuki Tomeda,Yuki Komatsubara,Reona Kitaura,Mutsunori Uenuma,Yukiharu Uraoka,Yuichiro Yamashita,Yoshiaki Nakamura +7 more
TL;DR: In this article, the authors developed transparent epitaxial SnO2 films with low thermal conductivity and high carrier mobility by domain engineering using the substrates with low symmetry: intentional control of the domain size and the defect density between crystal domains.
References
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Journal ArticleDOI
New Directions for Low-Dimensional Thermoelectric Materials**
Mildred S. Dresselhaus,Gang Chen,Ming Y. Tang,Ronggui Yang,Hohyun Lee,Dezhi Wang,Zhifeng Ren,Jean-Pierre Fleurial,Pawan Gogna +8 more
TL;DR: In this article, the ability to achieve a simultaneous increase in the power factor and a decrease in the thermal conductivity of the same nanocomposite sample and for transport in the same direction is discussed.
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Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States
Joseph P. Heremans,Vladimir Jovovic,Eric S. Toberer,Ali Saramat,Ken Kurosaki,Anek Charoenphakdee,Shinsuke Yamanaka,G. Jeffrey Snyder +7 more
TL;DR: A successful implementation through the use of the thallium impurity levels in lead telluride (PbTe) is reported, which results in a doubling of zT in p-type PbTe to above 1.5 at 773 kelvin.
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Convergence of electronic bands for high performance bulk thermoelectrics
TL;DR: It is demonstrated that it is possible to direct the convergence of many valleys in a bulk material by tuning the doping and composition, leading to an extraordinary zT value of 1.8 at about 850 kelvin.
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The electrical properties of polycrystalline silicon films
TL;DR: In this article, Boron doses of 1×1012-5×1015/cm2 were implanted at 60 keV into 1-μm-thick polysilicon films and Hall and resistivity measurements were made over a temperature range −50-250 °C.
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Bulk nanostructured thermoelectric materials: current research and future prospects
TL;DR: In this paper, the authors introduce the principles and present status of bulk nanostructured materials, then describe some of the unanswered questions about carrier transport and how current research is addressing these questions.