Journal ArticleDOI
The effect of Ti+ ion implantation on the anatase-rutile phase transformation and resistive switching properties of TiO 2 thin films
Ashis K. Manna,A. Barman,Shalik Ram Joshi,Biswarup Satpati,P. Dash,Ananya Chattaraj,Sanjeev Kumar Srivastava,Pratap K. Sahoo,Pratap K. Sahoo,Aloke Kanjilal,D. Kanjilal,Shikha Varma +11 more
TLDR
In this article, structural phase transformation and electrical resistive switching properties of TiO 2 thin films (80 nm) after their self-ion implantation with 50 keV Ti + ions at several fluences were investigated.Abstract:
We investigate here the structural phase transformation and electrical resistive switching properties of TiO 2 thin films (80 nm) after their self-ion implantation with 50 keV Ti + ions at several fluences. UV-Raman, grazing incidence x-ray diffraction (GIXRD), transmission electron microscopy, x-ray photoelectron spectroscopy, and atomic force microscopy techniques have been utilized to investigate the modifications in thin films. Both, the as-grown and ion implanted, films display mixed phases of rutile (R) and anatase (A). Surprisingly, however, a phase transition from A to R is observed at a critical fluence, where some anatase content transforms into rutile. This A to R transformation increases with additional fluence. The critical fluence found by GIXRD is slightly smaller ( 1 × 10 13 ions/cm 2) than from UV-Raman ( 1 × 10 14 ions/cm 2), indicating the first initiation of phase transformation probably in bulk. All the films contain anatase in nanocrystalline form also and the phase transformation seems to take place via aggregation of anatase nanoparticles. Thin films also show the presence of oxygen vacancies (O V) Ti 3 +, whose number grows with fluence. These O V as well as thermal spikes created during Ti + ion implantation are also crucial for the A-R transition. After implantation at the highest fluence, TiO 2 thin films show bipolar resistive switching behavior. The development of conducting filaments, formed by the migration of many oxygen vacancies generated during ion implantation, can be responsible for this behavior.We investigate here the structural phase transformation and electrical resistive switching properties of TiO 2 thin films (80 nm) after their self-ion implantation with 50 keV Ti + ions at several fluences. UV-Raman, grazing incidence x-ray diffraction (GIXRD), transmission electron microscopy, x-ray photoelectron spectroscopy, and atomic force microscopy techniques have been utilized to investigate the modifications in thin films. Both, the as-grown and ion implanted, films display mixed phases of rutile (R) and anatase (A). Surprisingly, however, a phase transition from A to R is observed at a critical fluence, where some anatase content transforms into rutile. This A to R transformation increases with additional fluence. The critical fluence found by GIXRD is slightly smaller ( 1 × 10 13 ions/cm 2) than from UV-Raman ( 1 × 10 14 ions/cm 2), indicating the first initiation of phase transformation probably in bulk. All the films contain anatase in nanocrystalline form also and the phase t...read more
Citations
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The one phonon raman spectrum in microcrystalline silicon
H. Richter,Z. P. Wang,Lothar Ley +2 more
TL;DR: In this paper, a relaxation in the q-vector selection rule for the excitation of the Raman active optical phonons was proposed to increase the red shift and broadening of the signal from microcrystalline silicon films.
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Amorphous carbon inhibited TiO2 phase transition in aqueous solution and its application in photocatalytic degradation of organic dye
TL;DR: In this article, a suppression phenomenon of anatase-to-rutile phase transition in aqueous solution induced by amorphous carbon was demonstrated, and a new and feasible way for controllable fabrication of high performance anatase phase TiO2 based photoelectrochemical and photocatalytic devices was provided.
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Artificial nociceptor based on TiO2 nanosheet memristor
TL;DR: In this paper, a memristor with an Al/TiO2/Pt structure was presented, which showed a gradual conductance regulation and could simulate synaptic functions such as potentiation and depression of synaptic weights.
Journal ArticleDOI
Dynamic Surface evolution and scaling studies on TiO2 thin films by Ti ion implantation
TL;DR: In this paper, the surface dynamics of TiO2 thin films, evolving under the implantation of 50 keV Ti ions, have been investigated, and the morphological evolution, as investigated with atomic force microscopy, delineates a surface smoothening by ion implantation.
Journal ArticleDOI
Formation of γ-Ga2O3 by ion implantation: Polymorphic phase transformation of β-Ga2O3
Javier García-Fernández,Snorre Braathen Kjeldby,Phuc Nguyen,O. B. Karlsen,Lasse Vines,Øystein Prytz +5 more
TL;DR: In this paper , the crystal structure of a series of ion implanted β-Ga2O3 samples were studied using electron diffraction, high resolution transmission electron microscopy, and scanning transmission electron microscope.
References
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The missing memristor found
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Hon-Sum Philip Wong,Heng-Yuan Lee,Shimeng Yu,Yu-Sheng Chen,Yi Wu,Pang-Shiu Chen,Byoungil Lee,Frederick T. Chen,Ming-Jinn Tsai +8 more
TL;DR: The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide resistive switching random access memory (RRAM) are discussed, with a focus on the use of RRAM for nonvolatile memory application.
Journal ArticleDOI
The one phonon Raman spectrum in microcrystalline silicon
H. Richter,Z. P. Wang,Lothar Ley +2 more
TL;DR: In this paper, a relaxation in the q-vector selection rule for the excitation of the Raman active optical phonons was proposed to increase the red shift and broadening of the signal from microcrystalline silicon films.