Proceedings ArticleDOI
The impact of noise parameter de-embedding on the high-frequency noise modeling of MOSFETs
M.J. Deen,Chih-Hung Chen +1 more
- pp 34-39
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TLDR
In this paper, the impact of noise parameter de-embedding in n-MOSFETs is discussed, and the results of the two approaches are compared using a physically-based pad model.Abstract:
This paper discusses the impact of noise parameter de-embedding in n-MOSFETs. A method to directly de-embed the parasitic pad effects from the measured noise parameters (minimum noise figure NF/sub min/, equivalent noise resistance R/sub n/, and optimized source reflection coefficient /spl Gamma//sub opt/) and the impact of noise parameter de-embedding on the high-frequency noise modeling of MOSFETs is presented. In addition, noise parameter de-embedding using a physically-based pad model is presented. Finally, the results of the two approaches are compared.read more
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References
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Book
Noise in solid state devices and circuits
TL;DR: In this paper, the authors propose a method to generate 1/f noise noise in particular Amplifier Circuits Mixers by using thermal noise shot and flicker noise, respectively.
Proceedings ArticleDOI
An effective gate resistance model for CMOS RF and noise modeling
TL;DR: In this paper, a physics-based effective gate resistance model representing the non-quasi-static (NQS) effect and the distributed gate electrode resistance is proposed for accurately predicting the RF performance of CMOS devices.
Journal ArticleDOI
High frequency noise of MOSFETs I Modeling
Chih-Hung Chen,M.J. Deen +1 more
TL;DR: In this article, a model is proposed which can predict accurately both ac and noise performance (all four noise parameters: minimum noise figure NF min, equivalent noise resistance R n, optimized source resistance R opt and reactance X opt ) of MOSFETs based on s -parameter and noise measurements at microwave frequencies.
Journal ArticleDOI
High frequency noise of MOSFETs. II. Experiments
TL;DR: In this article, Chen et al. used direct de-embedding techniques for obtaining the intrinsic scattering and noise parameters of modern MOSFETs at high-frequencies.