Journal ArticleDOI
Thermal activation of excitons in asymmetric InAs dots-in-a-well InxGa1−xAs∕GaAs structures
Tetyana Torchynska,J. L. Casas Espinola,L. V. Borkovska,Sergei S. Ostapenko,M. Dybiec,O. Polupan,N. Korsunska,Andreas Stintz,Petr G. Eliseev,Kevin J. Malloy +9 more
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In this article, the authors investigated the influence of different barrier values at the quantum dot (QD)/quantum well interface on the photoluminescence thermal quenching process.Abstract:
Photoluminescence, its temperature dependence, and photoluminescence excitation spectra of InAs quantum dots embedded in asymmetric InxGa1−xAs∕GaAs quantum wells [dots in a well (DWELL)] have been investigated as a function of the indium content x (x=010–025) in the capping InxGa1−xAs layer The asymmetric DWELL structures were created with the aim to investigate the influence of different barrier values at the quantum dot (QD)/quantum well interface on the photoluminescence thermal quenching process The set of rate equations for the two stage model for the capture and thermal escape of excitons in QDs are solved to analyze the nature of thermal activation energies for the QD photoluminescence quenching process The two stage model for exciton thermal activation was confirmed experimentally in the investigated QD structures as well The localization of nonradiative defects in InAs∕InGaAs DWELL structures is discussed on the base of comparison of theoretical and numerically calculated (fitting) resultsread more
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1.59μm room temperature emission from metamorphic InAs∕InGaAs quantum dots grown on GaAs substrates
TL;DR: In this paper, a strain-engineered quantum dot nanostructures grown on GaAs, with InGaAs confining layers and additional InAlAs barriers embedding InAs dots, are presented.
Journal ArticleDOI
Electronic energy levels and carrier dynamics in InAs/InGaAs dots-in-a-well structure investigated by optical spectroscopy
Rui Chen,Huiyun Liu,Handong Sun +2 more
TL;DR: In this article, the electronic energy levels and carrier dynamics in InAs/InxGa1−xAs dots-in-a-well (DWELL) structure were investigated by comprehensive spectroscopic characterization over a temperature range from 10 to 300 K.
Journal ArticleDOI
Carrier thermal escape in families of InAs/InP self-assembled quantum dots
TL;DR: In this article, the authors developed a coupled rate-equation model that includes the effect of carrier thermal escape from a quantum dot to the wetting layer and to the InP matrix, followed by transport, recapture or nonradiative recombination.
Journal ArticleDOI
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures.
TL;DR: It is shown that a significant reduction of the photoluminescence quenching can be obtained by the increase of the energy separation between wetting layers and quantum dot states that results from the insertion of enhanced barriers.
Journal ArticleDOI
Some aspects of exciton thermal exchange in InAs quantum dots coupled with InGaAs/GaAs quantum wells
TL;DR: In this paper, a set of rate equations for exciton dynamics (relaxation into QWs and QDs, and thermal escape) has been solved to analyze the mechanism of photoluminescence (PL) thermal quenching in studied structures.
References
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Book
Quantum dot heterostructures
TL;DR: In this paper, the growth and structural characterisation of self-organized Quantum Dots are discussed. But they do not consider the model of ideal and real quantum Dots.
Journal ArticleDOI
Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
TL;DR: In this paper, the lowest room-temperature threshold current density, 26 A/cm/sup 2 ), of any semiconductor diode laser was reported for a quantum dot device with a single InAs dot layer contained within a strained In/sub 0.85/As quantum well.
Journal ArticleDOI
InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
Victor M. Ustinov,Nikolay A. Maleev,A. E. Zhukov,A. R. Kovsh,A. Yu. Egorov,A. V. Lunev,B. V. Volovik,Igor Krestnikov,Yu. G. Musikhin,N. A. Bert,P. S. Kop’ev,Zh. I. Alferov,Nikolai N. Ledentsov,Dieter Bimberg +13 more
TL;DR: In this article, the lateral size of InAs islands has been found to be approximately 1.5 times larger as compared to the InAs/GaAs case, whereas the island heights and surface densities were close in both cases.
Journal ArticleDOI
Carrier thermal escape and retrapping in self-assembled quantum dots
TL;DR: In this article, the effects of carrier thermal escape and retrapping on the temperature dependence of the photoluminescence of InAs/GaAs self-assembled quantum dots are investigated.
Journal ArticleDOI
Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition
TL;DR: In this article, the authors demonstrated the 1.52 μm light emission at room temperature from self-assembled InAs quantum dots embedded in the In0.45Ga0.55As strain-reducing layer.