Tin-Vacancy Quantum Emitters in Diamond.
Takayuki Iwasaki,Yoshiyuki Miyamoto,Takashi Taniguchi,Petr Siyushev,Mathias H. Metsch,Fedor Jelezko,Mutsuko Hatano +6 more
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TLDR
The order of the experimentally obtained optical transition energies, compared with those of Si-V and Ge-V centers, was in good agreement with the theoretical calculations.Abstract:
Tin-vacancy ($\mathrm{Sn}\text{\ensuremath{-}}V$) color centers were created in diamond via ion implantation and subsequent high-temperature annealing up to $2100\text{ }\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$ at 7.7 GPa. The first-principles calculation suggested that a large atom of tin can be incorporated into a diamond lattice with a split-vacancy configuration, in which a tin atom sits on an interstitial site with two neighboring vacancies. The $\mathrm{Sn}\text{\ensuremath{-}}V$ center showed a sharp zero phonon line at 619 nm at room temperature. This line split into four peaks at cryogenic temperatures, with a larger ground state splitting ($\ensuremath{\sim}850\text{ }\text{ }\mathrm{GHz}$) than that of color centers based on other group-IV elements, i.e., silicon-vacancy ($\mathrm{Si}\text{\ensuremath{-}}V$) and germanium-vacancy ($\mathrm{Ge}\text{\ensuremath{-}}V$) centers. The excited state lifetime was estimated, via Hanbury Brown--Twiss interferometry measurements on single $\mathrm{Sn}\text{\ensuremath{-}}V$ quantum emitters, to be $\ensuremath{\sim}5\text{ }\text{ }\mathrm{ns}$. The order of the experimentally obtained optical transition energies, compared with those of $\mathrm{Si}\text{\ensuremath{-}}V$ and $\mathrm{Ge}\text{\ensuremath{-}}V$ centers, was in good agreement with the theoretical calculations.read more
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Quantum technologies with optically interfaced solid-state spins
David D. Awschalom,David D. Awschalom,Ronald Hanson,Jörg Wrachtrup,Jörg Wrachtrup,Brian B. Zhou,Brian B. Zhou +6 more
TL;DR: In this article, the authors review recent progress in impurity systems such as colour centres in diamond and silicon carbide, rare-earth ions in solids and donors in silicon and project a possible path to chip-scale quantum technologies through sustained advances in nanofabrication, quantum control and materials engineering.
Journal Article
Single-Photon Switching and Entanglement of Solid-State Qubits in an Integrated Nanophotonic System
Ruffin E. Evans,Alp Sipahigil,Denis D. Sukachev,Michael J. Burek,Johannes Borregaard,Mihir K. Bhaskar,Christian Nguyen,Jose Pacheco,Edward S. Bielejec,Marko Loncar,Mikhail D. Lukin +10 more
Abstract: Efficient interfaces between photons and quantum emitters form the basis for quantum networks and enable nonlinear optical devices operating at the single-photon level. We demonstrate an integrated platform for scalable quantum nanophotonics based on silicon-vacancy (SiV) color centers coupled to nanoscale diamond devices. By placing SiV centers inside diamond photonic crystal cavities, we realize a quantum-optical switch controlled by a single color center. We control the switch using SiV metastable orbital states and verify optical switching at the single-photon level by using photon correlation measurements. We use Raman transitions to realize a single-photon source with a tunable frequency and bandwidth in a diamond waveguide. Finally, we create entanglement between two SiV centers by detecting indistinguishable Raman photons emitted into a single waveguide. Entanglement is verified using a novel superradiant feature observed in photon correlation measurements, paving the way for the realization of quantum networks.
Journal Article
An integrated diamond nanophotonics platform for quantum optical networks
Mihir K. Bhaskar,Alp Sipahigil,Ruffin E. Evans,Denis D. Sukachev,Christian Nguyen,Michael J. Burek,Bartholomeus Machielse,Johannes Borregaard,Haig A. Atikian,Charles Meuwly,Lachlan J. Rogers,Petr Siyushev,Mathias H. Metsch,Jose Pacheco,Ryan M. Camacho,Edward S. Bielejec,Fedor Jelezko,Hongkun Park,Marko Loncar,Mikhail D. Lukin +19 more
TL;DR: An integrated platform for scalable quantum nanophotonics based on silicon-vacancy color centers coupled to diamond nanodevices is demonstrated and a quantum interference effect resulting from the superradiant emission of two entangled SiV centers is observed.
Journal ArticleDOI
Quantum nanophotonics with group IV defects in diamond.
TL;DR: The progress made in using group IV defect centres, which are anticipated to have practical advantages over the more commonly-used nitrogen vacancy centres, are surveyed.
Journal ArticleDOI
One-second coherence for a single electron spin coupled to a multi-qubit nuclear-spin environment.
M. H. Abobeih,J. Cramer,M.V. Bakker,Norbert Kalb,Matthew Markham,Daniel J. Twitchen,Tim H. Taminiau +6 more
TL;DR: A coherence time exceeding a second is realized for a single nitrogen-vacancy electron spin through decoupling sequences tailored to its microscopic nuclear-spin environment, providing a proof ofprinciple for quantum sensing of complex multi-spin systems and an opportunity for multi-qubit quantum registers with long coherence times.
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