Journal ArticleDOI
Two-dimensional simulation of pattern-dependent oxidation of silicon nanostructures on silicon-on-insulator substrates
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In this paper, the volume expansion due to silicon oxidation is treated as a dilational strain, and the strain is applied to a transition region in which silicon is converted to oxide.Abstract:
Pattern-dependent oxidation (PADOX) of silicon nanostructures fabricated on silicon-on-insulator (SOI) substrates is simulated. In order to reproduce the characteristic features of PADOX in the simulation, the volume expansion due to silicon oxidation is treated as a dilational strain, and the strain is applied to a transition region in which silicon is converted to oxide. In addition, the silicon oxide and transition layer are treated as viscoelastic solids, and the stress dependencies of the oxidation reaction, oxygen self-diffusion in the oxide, and oxide viscosity are taken into account. The simulated silicon and oxide shapes after oxidation satisfactorily reproduce the experimental results. The simulation results suggest that the rounded silicon shapes that appear after oxidation are mainly caused by the stress-induced reduction of oxide viscosity. Moreover, we obtain oxidation-induced strain and stress from the simulation. Based on the strain obtained, the electron potential profile responsible for the operation of single-electron transistor (SET) is investigated. The compressive strain in the silicon wire region of SETs reduces the bandgap, and this reduction is critical for the formation of the potential profile responsible for SET operation.read more
Citations
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Ab initio calculations of the mechanical and electronic properties of strained Si nanowires
TL;DR: In this article, a systematic study of the mechanical and electronic properties of strained small diameter (0.7\char21{}2) silicon nanowires (Si NWs) using ab initio density functional theory calculations is presented.
Journal ArticleDOI
Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon
TL;DR: In this article, the top-down fabrication and electrical performance of silicon nanowire (SiNW) gate-all-around (GAA) n-type and p-type MOSFET devices integrated on bulk silicon using a local-silicon-on-insulator (SOI) process is reported.
Journal ArticleDOI
Growth of nickel silicides in Si and Si/SiOx core/shell nanowires.
TL;DR: Experimental evidence that phase transformation is influenced by the stressed structure at nanoscale is observed, and the growth rate of nickel silicides, Ni31Si12 and NiSi2, is retarded dramatically.
Journal Article
Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
Seiji Horiguchi,Masao Nagase,Kenji Shiraishi,Hiroyuki Kageshima,Yasuo Takahashi,Katsumi Murase +5 more
TL;DR: In this article, the authors investigated the origin of the potential profile in silicon single-electron transistors (SETs) fabricated using pattern-dependent oxidation (PADOX) by making use of the geometric structure measured by atomic force microscope (AFM), the bandgap reduction due to compressive stress generated during PADOX obtained using the first-principles calculation, and the effective potential method.
Journal ArticleDOI
Massively-parallel ultra-high-aspect-ratio nanochannels as mesoporous membranes
Pan Mao,Jongyoon Han +1 more
TL;DR: A novel fabrication strategy for generating massively-parallel, regular vertical nanochannel membranes with a uniform, well-controlled gap size of approximately 50 nm and a depth up to approximately 40 microm, by using only standard semiconductor fabrication techniques is developed.
References
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TL;DR: The theory of reaction rates yields an equation for absolute viscosity applicable to cases involving activation energies where the usual theory of energy transfer does not apply as mentioned in this paper, which provides an explanation of the law of rectilinear diameters of Cailletet and Mathias.
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Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides
TL;DR: In this paper, the authors proposed a simplified mathematical formulation made possible by the symmetry in cylindrical structures, and compared with experimental data, possible applications, and limitations of the model are also discussed.
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Room temperature operation of a single electron transistor made by the scanning tunneling microscope nanooxidation process for the TiOx/Ti system
TL;DR: In this article, a single electron transistor (SET) is fabricated using the scanning tunneling microscope (STM) as a fabrication process, and the fabricated SET operates at room temperature.
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Thermal oxidation of silicon in dry oxygen growth-rate enhancement in the thin regime. I: Experimental results
TL;DR: The importance of l'epaisseur est independante de l'orientation du substrat, de la densite du dopage et de la pression partielle d'oxygene as mentioned in this paper.