Journal ArticleDOI
X-ray photoelectron spectra and electronic structure of Bi2X3 (X = O, S, Se, Te)
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In this paper, the valence band density of states and core levels have been measured for Bi 2 O 3, Bi 2 S 3, Bi 2 Se 3, and Bi 2 Te 3 by X-ray photoelectron spectroscopy.About:
This article is published in Chemical Physics.The article was published on 1977-03-01. It has received 114 citations till now. The article focuses on the topics: Electronegativity & Bismuth.read more
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Electronic structure and chemical bonding in bismuth sesquioxide polymorphs
TL;DR: In this paper, the electronic structure of the α-Bi2O3, Β-Bi 2O3 and γ-Bi 3 phases was investigated by the ab initio self-consistent LMTO method in a tight binding approximation and by the semi-empirical Huckel method.
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Electronic structure and optical properties of bismuth chalcogenides Bi2Q3 (Q = O, S, Se, Te) by first-principles calculations
Jie Deng,Zong-Yan Zhao +1 more
TL;DR: In this paper, first-principles calculations were performed to investigate the crystal structure, electronic properties, and optical properties of bismuth chalcogenides, including: Bi 2 O 3, Bi 2 S 3, Bi 2 Se 3, and Bi 2 Te 3.
Journal ArticleDOI
Growth and structure of thermally evaporated Bi2Te3 thin films
E. I. Rogacheva,A. V. Budnik,M. V. Dobrotvorskaya,A.G. Fedorov,S. I. Krivonogov,Pavel V. Mateychenko,O. N. Nashchekina,A. Yu. Sipatov +7 more
TL;DR: In this paper, the growth mechanism, microstructure, and crystal structure of the polycrystalline n-Bi2Te3 thin films with thickness d = 15-350nm, prepared by thermal evaporation in vacuum onto glass substrates, were studied.
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Photoemission and inverse-photoemission studies of Bi2Y3 (Y=S, Se, Te) semiconductors
Yoshifumi Ueda,Akihito Furuta,Hiroyuki Okuda,Masashi Nakatake,Hitoshi Sato,Hirofumi Namatame,Masaki Taniguchi +6 more
TL;DR: In this article, the authors investigated the conduction-band densities of states (DOSs) of Bi 2 Y 3 (Y =S, Se, Te) semiconductors by means of ultraviolet photoemission (UPS) and inverse-photoemission spectroscopy (IPES).
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Native vacancy defects in bismuth sulfide
TL;DR: In this paper, density-function theory (DFT) calculations of the electronic structure of Bi2S3 with native vacancy were performed to facilitate its applications by gaining insight into the role of native defects.
References
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Journal ArticleDOI
Electronegativity values from thermochemical data
TL;DR: In this paper, the electronegativities of sixtynine elements have been calculated from the most recent thermochemical data, and the mean deviation of the calculated electronegativity difference, 0·208 √ †, from the difference of the average electrone-gativities is 0·046 units.
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The use of semiconductors in thermoelectric refrigeration
H J Goldsmid,R W Douglas +1 more
TL;DR: In this article, the authors proposed that semiconductors should be chosen with high mean atomic weights and that they should be prepared with thermoelectric powers lying between 200 and 300 μVC-1.
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Electrical and optical properties of some M2v−bN3vi−b semiconductors
TL;DR: In this article, a number of compounds of V−B and VI−B elements, with chemical formula M 2 v − b N 3 vi − b been synthesized as single crystals of fairly good purity.
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Chemical bonding in bismuth telluride
J.R. Drabble,C.H.L. Goodman +1 more
TL;DR: In this paper, a model for the chemical bondins in bismuth telluride is proposed, which appears to dispose of some of the difficulties involved in earlier models, and is used to explain some properties of BTE and its alloys with BTE.
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Evolution of Core States from Energy Bands in the 4 d 5 s 5 p Region from Pd to Xe
TL;DR: In this paper, X-ray photoemission studies were performed on the $4d5s5p$ elements Pd through Te using monochromatized Al ($K\ensuremath{\alpha}$) radiation.