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Journal ArticleDOI

X-ray photoelectron spectra and electronic structure of Bi2X3 (X = O, S, Se, Te)

Thomas P. Debies, +1 more
- 01 Mar 1977 - 
- Vol. 20, Iss: 2, pp 277-283
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TLDR
In this paper, the valence band density of states and core levels have been measured for Bi 2 O 3, Bi 2 S 3, Bi 2 Se 3, and Bi 2 Te 3 by X-ray photoelectron spectroscopy.
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This article is published in Chemical Physics.The article was published on 1977-03-01. It has received 114 citations till now. The article focuses on the topics: Electronegativity & Bismuth.

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Citations
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Journal ArticleDOI

Influence of Na on the structure of Bi4Ti3O12 films deposited by liquid-delivery spin MOCVD

TL;DR: In this article, the authors showed that monovalent Na + ions have been incorporated on Bi 3+ sites in the perovskite units, and the proposed charge compensation for this aliovalent substitution is explained by a shift of the valence state of Bi 3 + ions in the vicinity of the incorporated Na+ ions from 3+ to 5+.
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Electron density redistribution in Sn-doped Bi 2 Te 3

TL;DR: In this article, a substantial increase in the density of electronic states below the valence-band top at energies μ≈15-30 meV has been revealed, which accounts for the unusual behavior of the kinetic coefficients in p-Bi2Te3:Sn crystals.
Journal ArticleDOI

On the Electronic Structure of As2O3, Sb2O3, and As2S3

TL;DR: In this paper, the SW method was applied to the AsKβ band in As2O3 and the X-ray photoelectron spectra of crystalline and amorphous As2S3.
Journal ArticleDOI

X‐Ray photoelectron valence band spectra from semiconductors Bi2Te3 and Sb2Te3

TL;DR: In this article, the authors measured the X-ray photoelectron spectra (ARXPS) for valence bands of the layer semiconductors Bi 2Te3 and Sb2Te3, and drew conclusions on the electronic structure of these semiconducting compounds.
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Surface Defines the Properties: Colloidal Bi2Se3 Nanosheets with High Electrical Conductivity

TL;DR: In this paper, the authors investigated the colloidal synthesis of Bi2Se3 nanosheets in ethylene glycol with the goal of increasing their lateral dimensions while keeping their thickness within a few nanometers.
References
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Journal ArticleDOI

Electronegativity values from thermochemical data

TL;DR: In this paper, the electronegativities of sixtynine elements have been calculated from the most recent thermochemical data, and the mean deviation of the calculated electronegativity difference, 0·208 √ †, from the difference of the average electrone-gativities is 0·046 units.
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The use of semiconductors in thermoelectric refrigeration

TL;DR: In this article, the authors proposed that semiconductors should be chosen with high mean atomic weights and that they should be prepared with thermoelectric powers lying between 200 and 300 μVC-1.
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Electrical and optical properties of some M2v−bN3vi−b semiconductors

TL;DR: In this article, a number of compounds of V−B and VI−B elements, with chemical formula M 2 v − b N 3 vi − b been synthesized as single crystals of fairly good purity.
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Chemical bonding in bismuth telluride

TL;DR: In this paper, a model for the chemical bondins in bismuth telluride is proposed, which appears to dispose of some of the difficulties involved in earlier models, and is used to explain some properties of BTE and its alloys with BTE.
Journal ArticleDOI

Evolution of Core States from Energy Bands in the 4 d 5 s 5 p Region from Pd to Xe

TL;DR: In this paper, X-ray photoemission studies were performed on the $4d5s5p$ elements Pd through Te using monochromatized Al ($K\ensuremath{\alpha}$) radiation.
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