Journal ArticleDOI
X-ray photoelectron spectra and electronic structure of Bi2X3 (X = O, S, Se, Te)
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In this paper, the valence band density of states and core levels have been measured for Bi 2 O 3, Bi 2 S 3, Bi 2 Se 3, and Bi 2 Te 3 by X-ray photoelectron spectroscopy.About:
This article is published in Chemical Physics.The article was published on 1977-03-01. It has received 114 citations till now. The article focuses on the topics: Electronegativity & Bismuth.read more
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Towards understanding the catalytic properties of lead-based ballistic modifiers in double base propellants.
TL;DR: This study demonstrates that various quantifiable properties exist for the lead-based materials, and shows that of the set, only Pb and α-PbO can support the formation of a weakly bound layer of amorphous carbon, a key experimental observable in the burning of DBPs.
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Dopant Clusterization and Oxygen Coordination in Ta-Doped Bismuth Oxide: A Structural and Computational Insight into the Mechanism of Anion Conduction
Marianna Gambino,Francesco Giannici,Alessandro Longo,Stefania Di Tommaso,Frédéric Labat,Antonino Martorana +5 more
TL;DR: In this article, a comprehensive appraisal of the local atomic structure of Ta-doped Bi2O3 is presented, investigating by X-ray absorption spectroscopy the aggregation motifs of Ta5+ and the interaction between dopants and oxygen vacancies.
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Bulk contribution to magnetotransport properties of low defect-density Bi$_2$Te$_3$ topological insulator thin films
TL;DR: In this paper, the authors combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelectron spectroscopy) and magnetotransport analysis to understand the low defect density and record high bulk electron mobility once charge is doped into the bulk by surface degradation.
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Core-level X-ray photoemission studies of Bi2Sr2Ca1−xEuitxCu2Oy
B. R. Sekhar,P. Srivastava,Naurang L. Saini,K.V.R. Rao,Seema Sharma,K. B. Garg,S.K. Agarwal,V. P. S. Awana,A. V. Narlikar +8 more
TL;DR: In this paper, the trivalent Eu was incorporated into the lattice, causing an increase in the valence states of Bi, Sr and Ca and a decrease in the Cu valence.
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Characterization of Bi2Se3:Fe epitaxial films grown by pulsed laser deposition
TL;DR: In this paper, the epitaxial films with high c-axis orientation were grown at 400 and 450°C and X-ray photoelectron spectroscopy revealed the presence of oxidized surface layer and Fe-Se bonding with the Fe valence state of + 3.
References
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Journal ArticleDOI
Electronegativity values from thermochemical data
TL;DR: In this paper, the electronegativities of sixtynine elements have been calculated from the most recent thermochemical data, and the mean deviation of the calculated electronegativity difference, 0·208 √ †, from the difference of the average electrone-gativities is 0·046 units.
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The use of semiconductors in thermoelectric refrigeration
H J Goldsmid,R W Douglas +1 more
TL;DR: In this article, the authors proposed that semiconductors should be chosen with high mean atomic weights and that they should be prepared with thermoelectric powers lying between 200 and 300 μVC-1.
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Electrical and optical properties of some M2v−bN3vi−b semiconductors
TL;DR: In this article, a number of compounds of V−B and VI−B elements, with chemical formula M 2 v − b N 3 vi − b been synthesized as single crystals of fairly good purity.
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Chemical bonding in bismuth telluride
J.R. Drabble,C.H.L. Goodman +1 more
TL;DR: In this paper, a model for the chemical bondins in bismuth telluride is proposed, which appears to dispose of some of the difficulties involved in earlier models, and is used to explain some properties of BTE and its alloys with BTE.
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Evolution of Core States from Energy Bands in the 4 d 5 s 5 p Region from Pd to Xe
TL;DR: In this paper, X-ray photoemission studies were performed on the $4d5s5p$ elements Pd through Te using monochromatized Al ($K\ensuremath{\alpha}$) radiation.