Journal ArticleDOI
X-ray photoelectron spectra and electronic structure of Bi2X3 (X = O, S, Se, Te)
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In this paper, the valence band density of states and core levels have been measured for Bi 2 O 3, Bi 2 S 3, Bi 2 Se 3, and Bi 2 Te 3 by X-ray photoelectron spectroscopy.About:
This article is published in Chemical Physics.The article was published on 1977-03-01. It has received 114 citations till now. The article focuses on the topics: Electronegativity & Bismuth.read more
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Electrical resistance and the time‐dependent oxidation of semicontinuous bismuth films
Joshua L. Cohn,Ctirad Uher +1 more
TL;DR: In this article, the electrical resistance and time-dependent oxidation of thin (≲90 A) semicontinuous bismuth films were investigated. And the authors showed that an increase in the room temperature sheet resistance with exposure to air is correlated with the growth of insulating Bi2O3 at the surfaces and internal boundaries between bistuth particles, consistent with a parabolic oxide growth law.
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Crystal growth of Bi 2 Te 3 and noble cleaved (0001) surface properties
Victor V. Atuchin,V. A. Golyashov,Konstantin A. Kokh,Konstantin A. Kokh,Ilya V. Korolkov,A.S. Kozhukhov,V. N. Kruchinin,I. D. Loshkarev,L.D. Pokrovsky,Igor P. Prosvirin,Konstantin Romanyuk,Konstantin Romanyuk,Oleg E. Tereshchenko,Oleg E. Tereshchenko +13 more
TL;DR: A high quality Bi 2 Te 3 (0001) crystal has been grown by the Bridgman method with the use of rotating heat field and phase purity and bulk structural quality of the crystal have been verified by XRD analysis and rocking curve observation as discussed by the authors.
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Surface Oxidation Properties in a Topological Insulator Bi 2 Te 3 Film
TL;DR: In this article, two pairs of new peaks in the XPS spectra involved with the binding energies from Bi 4f and Te 3d electrons correspond to Bi-O-Te bonds.
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Two types of drift mobilities in amorphous SeBi and SeAsTeBi systems
TL;DR: In this article, two types of drift mobilities were observed for both holes and electrons in amorphous chalcogenide semiconductors: hopping conduction through localized states and a carrier transport in extended states which is controlled by a multiple trapping of tail states.
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Hard x-ray photoemission spectroscopy of Bi2S3 thin films
TL;DR: In this paper, the electronic structure of polycrystalline Bi2S3 thin films deposited by thermal evaporation under high vacuum conditions was investigated with respect to their potential use as absorber materials in p-i-n solar cells by means of hard x-ray photoemission spectroscopy at the PETRA III synchrotron.
References
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Electronegativity values from thermochemical data
TL;DR: In this paper, the electronegativities of sixtynine elements have been calculated from the most recent thermochemical data, and the mean deviation of the calculated electronegativity difference, 0·208 √ †, from the difference of the average electrone-gativities is 0·046 units.
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The use of semiconductors in thermoelectric refrigeration
H J Goldsmid,R W Douglas +1 more
TL;DR: In this article, the authors proposed that semiconductors should be chosen with high mean atomic weights and that they should be prepared with thermoelectric powers lying between 200 and 300 μVC-1.
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Electrical and optical properties of some M2v−bN3vi−b semiconductors
TL;DR: In this article, a number of compounds of V−B and VI−B elements, with chemical formula M 2 v − b N 3 vi − b been synthesized as single crystals of fairly good purity.
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Chemical bonding in bismuth telluride
J.R. Drabble,C.H.L. Goodman +1 more
TL;DR: In this paper, a model for the chemical bondins in bismuth telluride is proposed, which appears to dispose of some of the difficulties involved in earlier models, and is used to explain some properties of BTE and its alloys with BTE.
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Evolution of Core States from Energy Bands in the 4 d 5 s 5 p Region from Pd to Xe
TL;DR: In this paper, X-ray photoemission studies were performed on the $4d5s5p$ elements Pd through Te using monochromatized Al ($K\ensuremath{\alpha}$) radiation.