Journal ArticleDOI
X-ray photoelectron spectra and electronic structure of Bi2X3 (X = O, S, Se, Te)
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In this paper, the valence band density of states and core levels have been measured for Bi 2 O 3, Bi 2 S 3, Bi 2 Se 3, and Bi 2 Te 3 by X-ray photoelectron spectroscopy.About:
This article is published in Chemical Physics.The article was published on 1977-03-01. It has received 114 citations till now. The article focuses on the topics: Electronegativity & Bismuth.read more
Citations
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Journal ArticleDOI
Chemical interactions at a Ti/Bi2Sr2CaCu2O8 interface
TL;DR: In this paper, X-ray and ultraviolet photoelectron spectroscopies were used to investigate the microscopic changes at the Ti/Bi2Sr2CaCu2O8 interface.
Journal ArticleDOI
Tuning band structure and texture for improved thermoelectric performance in BiSe
TL;DR: In this article , the authors reported the optimization of TE performance for BiSe through In doping to tune the band structure and the proper annealing treatment to adjust the texture, which achieved a maximum figure of merit ZT value of 0.33 at 523 K, which is about 43.5 % higher than that of the pristine BiSe sample without the texture adjustment.
Book ChapterDOI
A Model for the Electrical Doping of Chalcogenide Glasses by Bismuth
TL;DR: In this article, a mechanism is proposed to account for the ability of a Bi to dope electrically certain chalcogenide glasses, where the charged impurity causes electrical doping by upsetting the equilibrium between native charged defects.
Journal ArticleDOI
Phase Transformations in Bulk (Ge2Se7)88Bi5Sb7
TL;DR: In this paper, steady-state photoconductivity measurements indicate the presence of crystalline Bi2Se3 clusters in the annealed material, but also the subsequent gradual disappearance of this microstructure at room temperature.
Journal ArticleDOI
Bismuth Nanoplatelets: Universal Synthetic Strategy and Emerging Application for PEC-Type Photodetectors
TL;DR: In this article , the photo-response performance of Bi NPLs-based photodetectors was adjusted by external conditions and interpreted by density functional theory calculations in terms of the formation of the respective Bi-based compounds.
References
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Journal ArticleDOI
Electronegativity values from thermochemical data
TL;DR: In this paper, the electronegativities of sixtynine elements have been calculated from the most recent thermochemical data, and the mean deviation of the calculated electronegativity difference, 0·208 √ †, from the difference of the average electrone-gativities is 0·046 units.
Journal ArticleDOI
The use of semiconductors in thermoelectric refrigeration
H J Goldsmid,R W Douglas +1 more
TL;DR: In this article, the authors proposed that semiconductors should be chosen with high mean atomic weights and that they should be prepared with thermoelectric powers lying between 200 and 300 μVC-1.
Journal ArticleDOI
Electrical and optical properties of some M2v−bN3vi−b semiconductors
TL;DR: In this article, a number of compounds of V−B and VI−B elements, with chemical formula M 2 v − b N 3 vi − b been synthesized as single crystals of fairly good purity.
Journal ArticleDOI
Chemical bonding in bismuth telluride
J.R. Drabble,C.H.L. Goodman +1 more
TL;DR: In this paper, a model for the chemical bondins in bismuth telluride is proposed, which appears to dispose of some of the difficulties involved in earlier models, and is used to explain some properties of BTE and its alloys with BTE.
Journal ArticleDOI
Evolution of Core States from Energy Bands in the 4 d 5 s 5 p Region from Pd to Xe
TL;DR: In this paper, X-ray photoemission studies were performed on the $4d5s5p$ elements Pd through Te using monochromatized Al ($K\ensuremath{\alpha}$) radiation.