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How many transistors are in a13 chip? 

Thin-film transistor
Field-effect transistor
Subthreshold conduction
Transistor
Schottky diode

Answers from top 9 papers

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Papers (9)Insight
Proceedings Article•DOI
A complementary-pair of high-power MOSFET's
Takeaki Okabe, I. Yoshida, Shikayuki Ochi, M. Nagata 
01 Jan 1977
11 Citations
Measurement of these devices reveals superior thermal characteristic and assures a larger ASO than that of conventional bipolar transistors of the same chip size.
Journal Article•DOI
Transistor action in novel GaAs/W/GaAs structures
G. E. Derkits, J. P. Harbison, J. Levkoff, D. M. Hwang 
05 May 1986-Applied Physics Letters
13 Citations
These are the first reported metal gate transistors in the III‐V materials and the first using a nonepitaxial base and laterally seeded overgrowth.
Journal Article•DOI
Vertical organic transistors.
Björn Lüssem, Alrun A. Günther, Axel Fischer, Daniel Kasemann, Karl Leo 
14 Oct 2015-Journal of Physics: Condensed Matter
69 Citations
Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs.
Proceedings Article•DOI
Variability in sub-100nm SRAM designs
R. Heald, P. Wang 
07 Nov 2004
131 Citations
Hence, the small transistors in SRAM cells are particularly sensitive to these variations.
Journal Article•DOI
A nanoscale memory and transistor using backside trapping
Helena Silva, Sandip Tiwari 
01 Jun 2004-IEEE Transactions on Nanotechnology
20 Citations
The transistors are scalable because of the thin silicon technology and the memories are highly scalable because they allow efficient coupling between the carriers and storage region.
Open access•Journal Article•DOI
A novel retina chip with simple wiring for edge extraction
H. Ikeda, Kiyotaka Tsuji, Tetsuya Asai, Hiroo Yonezu, Jang-Kyoo Shin 
01 Feb 1998-IEEE Photonics Technology Letters
25 Citations
The chip has a novel wiring structure in which all pixels are connected through the channel of MOS transistors, which simplifies a wiring structure compared with conventional resistive networks.
Journal Article•DOI
A comparative study of thin film transistors using rare earth oxides as gates
P. Singh, B. Baishya 
16 Feb 1987-Thin Solid Films
12 Citations
Comparison of these devices shows that Cdse/Nd 2 O 3 and CdS-CdSe/Nd 2 O 3 transistors are superior in performance.
Journal Article•DOI
Low-subthreshold-swing tunnel transistors
Qin Zhang, Wei Zhao, Alan Seabaugh 
27 Mar 2006-IEEE Electron Device Letters
555 Citations
This formula is consistent with two recent reports of interband tunnel transistors, which show lower than 60-mV/dec subthreshold swings and provides two simple design principles for configuring these transistors.
Journal Article•DOI
Short Channel Characteristics of Gallium–Indium–Zinc–Oxide Thin Film Transistors for Three-Dimensional Stacking Memory
Ihun Song, Sunil Kim, Huaxiang Yin, Chang Jung Kim, Jae-Chul Park, Sang-Wook Kim, Hyuk Soon Choi, Eunha Lee, Youngsoo Park 
20 May 2008-IEEE Electron Device Letters
99 Citations
These promising results indicate that the GIZO thin film transistors could be a candidate for selection transistors in 3-D cross point stacking memory.

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