J. Van Steenbergen

TL;DR: In this article, thin, strained epi-Si is examined as a passivation of the Ge/gate dielectric interface, with an optimized thickness found at 6 monolayers.

TL;DR: The deposition behavior of HfO2 by metalorganic chemical vapor deposition on germanium has been investigated in this article, showing that much thinner interfacial layers can be obtained, approximately half the thickness of what is typically found for depositions on silicon, suggesting the possibility of more aggressive oxide thickness∕leakage scaling.

TL;DR: In this article, a thin epitaxially grown Si layer is used as the high-k dielectric to obtain low interface state density and high carrier mobility for Ge MOSFETs.

TL;DR: In this paper, a method for extracting parameters of weakly Fermi-level pinned germanium capacitors is introduced, which makes progress toward a more generally valid reliable interface state parameter extraction.

TL;DR: In this paper, the authors studied the thermal stability of HfO2 thin layers on germanium and the substrate interface development and found that hafnium germanate is an oxygen barrier.