F
Franz Kreupl
Researcher at Technische Universität München
Publications - 269
Citations - 6240
Franz Kreupl is an academic researcher from Technische Universität München. The author has contributed to research in topics: Carbon nanotube & Layer (electronics). The author has an hindex of 40, co-authored 269 publications receiving 5986 citations. Previous affiliations of Franz Kreupl include Infineon Technologies & SanDisk.
Papers
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Journal ArticleDOI
Carbon nanotubes in interconnect applications
Franz Kreupl,Andrew Graham,Georg S. Duesberg,Werner Steinhögl,Maik Liebau,Eugen Unger,Wolfgang Hönlein +6 more
TL;DR: In this article, the authors compare the electrical properties of carbon nanotubes with equivalent metal wires made of gold and describe their progress in process integration, and propose a multi-walled carbon-nanotubes as an interconnect material of the future.
Journal ArticleDOI
Reconfigurable Silicon Nanowire Transistors
TL;DR: This novel nanotransistor technology makes way for a simple and compact hardware platform that can be flexibly reconfigured during operation to perform different logic computations yielding unprecedented circuit design flexibility.
Journal ArticleDOI
Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts
Walter M. Weber,Lutz Geelhaar,A. P. Graham,Eugen Unger,Georg S. Duesberg,Maik Liebau,Werner Pamler,Caroline Chèze,Henning Riechert,Paolo Lugli,Franz Kreupl +10 more
TL;DR: Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths, and the transistors displayed p-type behaviour, sustained current densities, and on/off current ratios.
Journal ArticleDOI
How do carbon nanotubes fit into the semiconductor roadmap
Andrew Graham,Georg S. Duesberg,Wolfgang Hoenlein,Franz Kreupl,Maik Liebau,R. Martin,B. Rajasekharan,Werner Pamler,Robert Seidel,Werner Steinhoegl,Eugen Unger +10 more
TL;DR: In this paper, the authors present an overview of the issues related to the integration of carbon nanotubes into microelectronics systems and discuss the problems associated with the construction of nanotube-based devices.
Patent
Bottom electrodes for use with metal oxide resistivity switching layers
TL;DR: In this article, a memory cell may be formed from a metal-insulator-metal (MIM) stack that includes a first conductive layer comprising a silicon-germanium (SiGe) alloy, a resistivity-switching layer, and a metal oxide layer.