Journal ArticleDOI
Carbon-doped GeTe: A promising material for Phase-Change Memories
G. Betti Beneventi,L. Perniola,Veronique Sousa,E. Gourvest,E. Gourvest,Sylvain Maitrejean,J.C. Bastien,A. Bastard,Bérangère Hyot,Alain Fargeix,C. Jahan,J. F. Nodin,A. Persico,Andrea Fantini,D. Blachier,Alain Toffoli,S. Loubriat,A. Roule,Sandrine Lhostis,H. Feldis,G. Reimbold,T. Billon,B. De Salvo,Luca Larcher,Paolo Pavan,Daniel Bensahel,Pascale Mazoyer,Roberto Annunziata,Paola Zuliani,Fabien Boulanger +29 more
TLDR
In this paper, the authors investigated carbon-doped GeTe (GeTeC) as a novel material for phase-change memories (PCM) and reported very good data retention properties and reduction of RESET current.Abstract:
This paper investigates Carbon-doped GeTe (GeTeC) as novel material for Phase-Change Memories (PCM). In the first part of the manuscript, a study of GeTeC blanket layers is presented. Focus is on GeTeC amorphous phase stability, which has been studied by means of optical reflectivity and electrical resistivity measurements, and on GeTeC structure and composition, analyzed by XRD and Raman spectroscopy. Then, electrical characterization of GeTeC-based PCM devices is reported: resistance drift, data retention performances, RESET current and power, and SET time have been investigated. Very good data retention properties and reduction of RESET current make GeTeC suitable for both embedded and stand-alone PCM applications, thus suggesting GeTeC as promising candidate to address some of the major issues of today’s PCM technology.read more
Citations
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Journal ArticleDOI
A comprehensive review on emerging artificial neuromorphic devices
TL;DR: A comprehensive review on emerging artificial neuromorphic devices and their applications is offered, showing that anion/cation migration-based memristive devices, phase change, and spintronic synapses have been quite mature and possess excellent stability as a memory device, yet they still suffer from challenges in weight updating linearity and symmetry.
Journal ArticleDOI
Review of memristor devices in neuromorphic computing: materials sciences and device challenges
Journal ArticleDOI
Phase Change Materials for Non-Volatile Memory devices: From Technological Challenges to Materials Science Issues
Abstract: Chalcogenide Phase-Change Materials (PCMs), such as Ge-Sb-Te alloys, are showing outstanding properties, which has led to their successful use for a long time in optical memories (DVDs) and, recently, in non-volatile resistive memories. The latter, known as Phase-Change Material memories or Phase-Change Random Access Memories (PCRAMs), are the most promising candidate among emerging Non-Volatile Memory (NVM) technologies to replace the current FLASH memories at CMOS technology nodes under 28 nm. Chalcogenide PCMs exhibit fast and reversible phase transformations between crystalline and amorphous states with very different transport and optical properties leading to a unique set of features for PCRAMs, such as fast programming, good cyclability, high scalability, multi-level storage capability and good data retention. Nevertheless, PCM memory technology has to overcome several challenges to definitively invade the NVM market. In this review paper we examine the main technological challenges that PCM memory technology must face and we illustrate how new memory architecture, innovative deposition methods and PCM composition optimization can contribute to further improvements of this technology. In particular, we examine how to lower the programming currents and increase data retention. Scaling down PCM memories for large scale integration means incorporation of the phase-change material into more and more confined structures and raises material science issues to understand interface and size effects on crystallization. Other material science issues are related to the stability and ageing of the amorphous state of phase-change materials. The stability of the amorphous phase, which determines data retention in memory devices, can be increased by doping the phase-change material. Ageing of the amorphous phase leads to a large increase of the resistivity with time (resistance drift), which has hindered up-to-now the development of ultra-high multilevel storage devices. A review of the current understanding of all these issues is provided from a material science point of view.
Journal ArticleDOI
Chalcogenides by Design: Functionality through Metavalent Bonding and Confinement
TL;DR: Evidence will be presented that for metavalently bonded materials interesting effects arise in reduced dimensions, and the consequences for the crystallization kinetics of thin films and nanoparticles will be discussed in detail.
Journal ArticleDOI
Phase-Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization
TL;DR: In this article, the authors summarized the broad applications of phase-change materials and proposed strategies on material optimizations to further enhance device performances, and an outlook on new applications with these advanced superlattice materials is suggested.
References
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Journal ArticleDOI
Phase-change random access memory: a scalable technology
Simone Raoux,Geoffrey W. Burr,Matthew J. Breitwisch,Charles T. Rettner,Y.-C. Chen,Robert M. Shelby,Martin Salinga,Daniel Krebs,Shih-Hung Chen,H.L. Lung,Chung H. Lam +10 more
TL;DR: This work discusses the critical aspects that may affect the scaling of PCRAM, including materials properties, power consumption during programming and read operations, thermal cross-talk between memory cells, and failure mechanisms, and discusses experiments that directly address the scaling properties of the phase-change materials themselves.
Journal ArticleDOI
Nanosecond switching in GeTe phase change memory cells
Gunnar Bruns,P. Merkelbach,C. Schlockermann,Martin Salinga,Matthias Wuttig,Thomas Happ,Jan Boris Philipp,Michael Kund +7 more
TL;DR: In this article, the electrical switching behavior of GeTe-based phase change memory devices is characterized by time resolved experiments, and the minimum SET pulse duration can even be reduced down to 1 ns.
Proceedings ArticleDOI
A novel cell technology using N-doped GeSbTe films for phase change RAM
Hideki Horii,Ji-Hye Yi,J.H. Park,Yong-ho Ha,In-Gyu Baek,S.O. Park,Y.N. Hwang,Sun-Ghil Lee,Y.T. Kim,K.H. Lee,U-In Chung,June Moon +11 more
TL;DR: In this paper, the authors tried to increase the GST resistivity by doping nitrogen and found that high resistive GST is indispensable to minimize the writing current of phase change random access memory (PRAM).
Proceedings ArticleDOI
Highly manufacturable high density phase change memory of 64Mb and beyond
S.J. Ahn,Yoon-Jong Song,Changwook Jeong,Jun-Ho Shin,Y. Fai,Yoo-Sang Hwang,Sun-Ghil Lee,Kyung-Chang Ryoo,S.Y. Lee,J.H. Park,Hideki Horii,Yong-ho Ha,Ji-Hye Yi,B.J. Kuh,Gwan-Hyeob Koh,Gitae Jeong,H.S. Jeong,Kinam Kim,Byung-Il Ryu +18 more
TL;DR: In this article, a high-density 64Mbit PRAM was successfully fabricated using N-doped Ge/sub 2/Sb/Sub 2/Te/sub 5/ (GST) and optimal GST etching process, achieving low writing current of 0.6 mA and clear separation between SET and RESET resistance distributions.
Proceedings ArticleDOI
A 45nm generation Phase Change Memory technology
TL;DR: A 45nm generation PCM technology with an effective cell as small as 0.015 µm2 has been developed on a 1Gb product as discussed by the authors, and good electrical properties and reliability results are reported, confirming that PCM has reached the maturity to become a mainstream technology for high density nonvolatile memory applications.