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Rodney S. Ruoff

Researcher at Ulsan National Institute of Science and Technology

Publications -  689
Citations -  214247

Rodney S. Ruoff is an academic researcher from Ulsan National Institute of Science and Technology. The author has contributed to research in topics: Graphene & Graphene oxide paper. The author has an hindex of 164, co-authored 666 publications receiving 194902 citations. Previous affiliations of Rodney S. Ruoff include Texas State University & North Carolina State University.

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Graphene Films: Synthesis of Graphene Films on Copper Foils by Chemical Vapor Deposition (Adv. Mater. 29/2016).

TL;DR: Copper is one of the best candidates for graphene growth due to the advantages of good control over the graphene thickness, the growth of high-quality graphene, and the ease for graphene transfer, and has been widely used for production of large-area graphene films in both academia and industry.
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Crystalline Boron Nanowires.

TL;DR: In this article, the authors describe CVD growth of elemental boron nanowires, which are found to be dense nanowhiskers rather than nanotubes, and conductivity measurements establish that they are semiconducting.
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Impact of Grain Boundaries on the Elastic Behavior of Transferred Polycrystalline Graphene

TL;DR: In this paper, the in-plane stiffness of polycrystalline graphene obtained by chemi cation was analyzed and shown to be strongly affected by their crystal structures and defect configurations.
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Double-Spiral Hexagonal Boron Nitride and Shear Strained Coalescence Boundary.

TL;DR: The formation of intertwined double-spiral few-layer h-BN that is driven by screw dislocations located at the antiphase boundaries of monolayer domains is reported and the occurrence of shear strains at the boundaries of merged spiral islands is found.
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Structure and photoluminescence of helium-intercalated fullerite C60

TL;DR: In this article, the authors studied the effect of intercalation with helium on the pair formation in fullerite C60 and showed that the presence of helium in lattice voids can reduce that part of the luminescent intensity which is due to the emission of covalently bound pairs of C60 molecules, the so-called deep traps with the 0-0 transition energy close to 1.69 eV.