다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Phd by thesis

Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.

A Survey of Wide Bandgap Power Semiconductor Devices

Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

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Light-emitting diodes

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The ballistic hole transport properties in rectangular cross-sectional germanium nanowire transistors with various geometries were studied based on the “Top of the Barrier” model. Then, by an extension of this model, the quasi-ballistic hole transport was discussed taking into account phonon and surface roughness scattering in the channel and source-to-drain direct tunneling. Among several nanowire geometries targeted in this study, the [1 1 0]-oriented nanowire with large height along [1 1 ¯ 0] ([1 1 0]/(1  1 ¯  0) NW) exhibited the largest ballistic current. This was understood from its large density of states and resulting high hole density. Large density of states, however, enhances backscattering in the channel. An approximation analysis of quasi-ballistic transport suggested that the [1 1 0]/(0 0 1) NW with higher mobility can outperform [1 1 0]/(1  1 ¯  0) NW when scattering and tunneling are considered.

Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended “Top of the Barrier” model

Dominant conduction mechanism in TaO x -based resistive switching devices

Temperature and injection level dependencies of carrier lifetimes in p-type and n-type 4H-SiC epilayers have been investigated. The carrier lifetimes have been measured by differential microwave photoconductance decay measurements at various injection levels and temperatures. In both p-type and n-type epilayers, the carrier lifetimes gradually increased with increasing the injection level except for the very high injection condition. And the carrier lifetimes exhibited continuous increase with elevating the temperature for both epilayers. The carrier lifetime reached 3.3 µs in p-type and 4.2 µs in n-type epilayers at 250°C and an injection level of 1.8x1016 cm-3.

Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers

Non-polar AlN epitaxial growth on SiC substrates with the (11–20) face, which is parallel to the 〈0001〉 direction, has been investigated. AlN(11–20) epilayers were grown on 6H- and 4H-SiC(11–20) substrates by molecular-beam epitaxy (MBE) using elemental Al and rf plasma-excited nitrogen. The crystalline structure of the AlN layer was strongly influenced by the stacking structure of the SiC substrate. A considerably smooth AlN(11–20) layer with an rms roughness of 0.3 nm was obtained on the 4H-SiC(11–20) substrate. From the results of X-ray diffraction (XRD), the superior crystalline quality of the AlN(11–20) layer on the 4H-SiC(11–20) substrate was clearly shown.

Growth of high-quality non-polar AlN on 4H-SiC(11–20) substrate by molecular-beam epitaxy

A technique for mixing various polarity, crystal surface, crystal orientation on a SiC substrate surface is provided to form SiC, III party Nitride, or II party Oxide layer on the surface. The first SiC substrate with (0001) surface and the second SiC substrate with (000-1) surface are prepared. The SiC substrates are oxidized to form an oxide film, and the two substrates are welded in a manner that the backside of the second SiC substrate facing the surface of the first SiC substrate. The portion relating to the second SiC substrate is thinned into a thin layer. By using lithography and RIE skill, the thin layer of the second SiC substrate is fabricated into strips according to the required period. A substrate with alternative (0001) and (000-1) surfaces of SiC can be manufactured out.

Tsunenobu Kimoto

Papers

Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended “Top of the Barrier” model

Dominant conduction mechanism in TaO x -based resistive switching devices

Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers

Growth of high-quality non-polar AlN on 4H-SiC(11–20) substrate by molecular-beam epitaxy

Compound semiconductor device and method of manufacturing the compound semiconductor device