Tsunenobu Kimoto

TL;DR: In this article, a lateral junction field effect transistor (LJFET) with a first gate electrode layer (18A), having a p-type impurity concentration higher than that of a second gate layer (12), is provided between source/drain region layers (6, 8) in a third semiconductor layer (13) extending into both the second and third layers.

TL;DR: In this article, the authors investigated the deep level transient spectroscopy measurements in both n-and p-type 4H-SiC epilayers and revealed almost all the deep levels located in the whole energy range of the bandgap.

TL;DR: In this paper, a low-loss junction field-effect transistor (JFET) capable of switching at high voltage and high current comprises a gate region (2) of a second conductivity type provided on the surface of a semiconductor substrate, a source region (1) of first conductivity types, a channel region (10) of the first conductivities extending continuously from the source region, a region (5) from the gate region to define the channel, a drain region (3) of second conductivities providing on the backside, and a drift region (

TL;DR: In this article, an aluminum-based high-permittivity gate dielectrics and suitable metal electrodes were systematically designed for advanced SiC power metal-oxide-semiconductor field effect transistors (MOSFETs).