T
Tsunenobu Kimoto
Researcher at Kyoto University
Publications - 635
Citations - 15807
Tsunenobu Kimoto is an academic researcher from Kyoto University. The author has contributed to research in topics: Silicon carbide & Diode. The author has an hindex of 58, co-authored 622 publications receiving 13668 citations. Previous affiliations of Tsunenobu Kimoto include Eötvös Loránd University & Sumitomo Electric Industries.
Papers
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Journal ArticleDOI
Characterization of silicon dioxide films on a 4H-SiC Si(0001) face by fourier transform infrared (FT-IR) spectroscopy and cathodoluminescence spectroscopy.
Masanobu Yoshikawa,Hirohumi Seki,Keiko Inoue,Keiko Matsuda,Yusaku Tanahashi,Hideki Sako,Yuihiro Nanen,Muneharu Kato,Tsunenobu Kimoto +8 more
TL;DR: FT-IR and CL spectroscopies provide us with a large amount of data on OVCs in the SiO2 films on a 4H-SiC substrate, which indicated that the channel mobility of the SiC metal-oxide-semiconductor field-effect transistor (MOSFET) decreases roughly in proportion to the increase in the intensity of the CL peak at 460 and 490 nm.
Journal ArticleDOI
Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures
TL;DR: In this article, the barrier heights in Ti and Ni/n-SiC Schottky barrier diodes (SBDs) in a wide range of donor density (N d = 2 × 1017−1 × 1019 cm−3) were investigated.
Book ChapterDOI
SiC material properties
TL;DR: In this article, the crystal structure, electronic band structure, and physical properties of silicon carbide (SiC) are introduced and the impacts of these defects on performance and reliability of SiC power devices are described.
Journal ArticleDOI
Unique resistive switching phenomena exhibiting both filament-type and interface-type switching in Ti/Pr0.7Ca0.3MnO3−δ/Pt ReRAM cells
TL;DR: In this paper, the currentvoltage characteristics of resistive random-access memory cells with Ti/Pr0.7Ca0.3MnO3−δ (PCMO)/Pt stack structures were investigated.
Journal ArticleDOI
Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons
Sergey A. Reshanov,Svetlana Beljakowa,Bernd Zippelius,Gerhard Pensl,Katsunori Danno,Giovanni Alfieri,Tsunenobu Kimoto,Shinobu Onoda,Takeshi Ohshima,Fei Yan,Robert P. Devaty,Wolfgang J. Choyke +11 more
TL;DR: In this paper, a systematic study of the thermal stability of defect centers observed in n-and p-type 4H-SiC by deep level transient spectroscopy (DLTS) is presented.