T
Tsunenobu Kimoto
Researcher at Kyoto University
Publications - 635
Citations - 15807
Tsunenobu Kimoto is an academic researcher from Kyoto University. The author has contributed to research in topics: Silicon carbide & Diode. The author has an hindex of 58, co-authored 622 publications receiving 13668 citations. Previous affiliations of Tsunenobu Kimoto include Eötvös Loránd University & Sumitomo Electric Industries.
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Characterization of ZrB2(0001) surface prepared by ex situ HF solution treatment toward applications as a substrate for GaN growth
TL;DR: In this paper, the same authors investigated the long-range order properties of ZrB 2 (0.0, 0, 0.1) surfaces grown by the rf-floating zone technique.
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Effects of Parasitic Region in SiC Bipolar Junction Transistors on Forced Current Gain
TL;DR: In this paper, the effects of a parasitic region in SiC BJTs on conductivity modulation and a forced current gain (βF) were investigated by using TCAD simulation with various device structures.
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Electronic properties of finite‐length silicon carbide nanotubes
TL;DR: In this paper, the electronic properties of silicon carbide nanotubes (SiCNTs) as a function of length were investigated by means of density functional theory (DFT), and it was found that the increasing nanotube length yields a higher localization of the lowest unoccupied and highest occupied molecular orbitals (LUMO and HOMO), thus affecting the behavior of the band gap and chemical reactivity of the SiCNT.
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Reduction of stacking faults in fast epitaxial growth of 4H-SiC and its impacts on high-voltage Schottky diodes
TL;DR: The impact of stacking faults on the performance of Schottky barrier diodes was investigated in this article, where it was shown that most stacking faults with an 8H structure are generated near the epilayer/substrate interface during CVD.
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Bandgap shift by quantum confinement effect in 〈100〉 Si-nanowires derived from threshold-voltage shift of fabricated metal-oxide-semiconductor field effect transistors and theoretical calculations
TL;DR: In this article, a density functional theory, tight binding method, and effective mass approximation was used to calculate the bandgap of Si-NW MOSFETs, which showed good agreement with that derived from threshold voltage.