다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Phd by thesis

Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.

A Survey of Wide Bandgap Power Semiconductor Devices

Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

/pdf/light-emitting-diodes-ubzde6g9qc.pdf

Light-emitting diodes

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

In this study, to reveal the origin of the Z1∕2 center, a lifetime killer in n-type 4H-SiC, the concentrations of the Z1∕2 center and point defects are compared in the same samples, using deep level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). The Z1∕2 concentration in the samples is varied by irradiation with 250 keV electrons with various fluences. The concentration of a single carbon vacancy (VC) measured by EPR under light illumination can well be explained with the Z1∕2 concentration derived from C-V and DLTS irrespective of the doping concentration and the electron fluence, indicating that the Z1∕2 center originates from a single VC.

/pdf/quantitative-comparison-between-z1-2-center-and-carbon-18qtvnr04b.pdf

Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC

High-dose ion implantation of phosphorus into 4H–SiC has been investigated. Phosphorus ion implantation with a 1×1016 cm−2 dose at 800 °C into 4H–SiC (0001) has resulted in a sheet resistance of 80 Ω/□ after annealing at 1700 °C. A similar sheet resistance of 110 Ω/□ was achieved even by room-temperature implantation when 4H–SiC (1120) was employed, owing to excellent recrystallization of this face revealed by Rutherford backscattering channeling spectroscopy. The sheet resistance could be further reduced down to 27 Ω/□ by 800 °C implantation into 4H–SiC (1120) followed by annealing at 1700 °C. 4H–SiC (1120) showed a very flat surface after annealing.

/pdf/remarkable-lattice-recovery-and-low-sheet-resistance-of-2v83ccsfcz.pdf

Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H–SiC (112̄0)

Homoepitaxial growth of 4H-SiC(1120) and (0338) by hot-wall chemical vapor deposition has been investigated. Both the residual-donor concentration and deep-level concentrations can be reduced by increasing the C/Si ratio during growth. The optimum C/Si ratio for obtaining high-quality epilayers with good morphology is higher on the non-basal planes than on off-axis (0001). The correlation between deep levels and growth condition is discussed.

https://iopscience.iop.org/article/10.1143/JJAP.42.7294/pdf

Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338)

The breakdown fields along the 〈1120〉 and 〈0338〉 directions in 4H–SiC have been measured. For the measurements, epitaxial p+n diodes with mesa structures were fabricated on the (1120) and (0338) faces, and they showed good rectification properties and avalanche breakdown. The breakdown fields along these directions calculated from the breakdown voltage were found to be about three quarters of that along the 〈0001〉 direction in 4H–SiC. The cause of the anisotropy in breakdown field is discussed.

/pdf/anisotropy-in-breakdown-field-of-4h-sic-ec5yh244ec.pdf

Tsunenobu Kimoto

Papers

Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC

Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H–SiC (112̄0)

Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338)

Anisotropy in breakdown field of 4H–SiC

Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature