T
Tsunenobu Kimoto
Researcher at Kyoto University
Publications - 635
Citations - 15807
Tsunenobu Kimoto is an academic researcher from Kyoto University. The author has contributed to research in topics: Silicon carbide & Diode. The author has an hindex of 58, co-authored 622 publications receiving 13668 citations. Previous affiliations of Tsunenobu Kimoto include Eötvös Loránd University & Sumitomo Electric Industries.
Papers
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Proceedings ArticleDOI
High-Voltage 4H-SiC RESURF MOSFETs Processed by Oxide Deposition and N2O Annealing
Journal ArticleDOI
Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC
TL;DR: In this paper, deep levels are investigated, which are introduced by reactive ion etching (RIE) of n-type/p-type 4H-SiC, and various kinds of defects remain at a total density of ~5× 1014 cm-3 in a surface-near region from 0.3 μm to 1.0 μm even after annealing at 1000oC.
Journal ArticleDOI
Mobility degradation under a high effective normal field in an inversion layer of 4H-SiC (0001) metal–oxide–semiconductor structures annealed in POCl3
Koji Ito,Tsunenobu Kimoto +1 more
TL;DR: In this paper , a negative body bias (0 V ≥ V BS ≥ −40 V) was applied to an inversion layer of 4H-silicon carbide (SiC) (0001) metaloxide-oxide-semiconductor field effect transistors (MOSFETs) annealed in POCl3.
Proceedings ArticleDOI
Conduction-type dependence of thermal oxidation rate on SiC(0001)
TL;DR: The conduction-type dependent thermal oxidation rate in SiC was discovered in this paper, and it was shown that for n-type SiC the oxide thickness increases for higher doping density, and for p-type the thickness decreases.