T
Tsunenobu Kimoto
Researcher at Kyoto University
Publications - 635
Citations - 15807
Tsunenobu Kimoto is an academic researcher from Kyoto University. The author has contributed to research in topics: Silicon carbide & Diode. The author has an hindex of 58, co-authored 622 publications receiving 13668 citations. Previous affiliations of Tsunenobu Kimoto include Eötvös Loránd University & Sumitomo Electric Industries.
Papers
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Proceedings ArticleDOI
Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics
Takuji Hosoi,Shuji Azumo,Yusaku Kashiwagi,Shigetoshi Hosaka,Ryota Nakamura,Shuhei Mitani,Yuki Nakano,Hirokazu Asahara,Takashi Nakamura,Tsunenobu Kimoto,Takayoshi Shimura,Heiji Watanabe +11 more
TL;DR: In this paper, the thickness ratio of the AlON layer to the SiO 2 interlayer and nitrogen content in AlON film were carefully optimized to enhance device performance and reliability.
Journal ArticleDOI
Recent achievements and future challenges in SiC homoepitaxial growth
Tsunenobu Kimoto,Seiya Nakazawa,Keiko Fujihira,Taichi Hirao,Shun-ichi Nakamura,Yi Chen,Koji Hashimoto,Hiroyuki Matsunami +7 more
Journal ArticleDOI
Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy
Kazutaka Kanegae,Hajime Fujikura,Yohei Otoki,Taichiro Konno,Takehiro Yoshida,Masahiro Horita,Masahiro Horita,Tsunenobu Kimoto,Jun Suda,Jun Suda +9 more
TL;DR: In this article, the authors studied deep levels in quartz-free hydride-vapor-phase epitaxy (QF-HVPE)-grown homoepitaxial n-type GaN layers within which three electron and eight hole traps were detected.
Journal ArticleDOI
Identification of dislocations in 4H-SiC epitaxial layers and substrates using photoluminescence imaging
TL;DR: In this paper, dislocations in n-and p-type substrates as well as in epitaxial layers (epilayers) were clearly identified using a photoluminescence (PL) imaging technique.