T
Tsunenobu Kimoto
Researcher at Kyoto University
Publications - 635
Citations - 15807
Tsunenobu Kimoto is an academic researcher from Kyoto University. The author has contributed to research in topics: Silicon carbide & Diode. The author has an hindex of 58, co-authored 622 publications receiving 13668 citations. Previous affiliations of Tsunenobu Kimoto include Eötvös Loránd University & Sumitomo Electric Industries.
Papers
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Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing
TL;DR: In this article, an oxide deposition followed by high-temperature annealing in N2O has been investigated to improve the quality of 4H-SiC MOS structures.
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4H-SiC MOSFETs on (03-38) Face
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Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition
Katsunori Danno,Koichi Hashimoto,Hiroaki Saitoh,Hiroaki Saitoh,Tsunenobu Kimoto,Hiroyuki Matsunami +5 more
TL;DR: In this article, a mirror-like surface was obtained by employing an optimum C/Si ratio and by an improved process of initial growth in a SiH4-C3H8-H2 system at 1550°C.
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Evaluation of High Frequency Switching Capability of SiC Schottky Barrier Diode, Based on Junction Capacitance Model
TL;DR: In this paper, the authors investigated the switching capability of an SiC Schottky barrier diode (SBD) in rectification of high frequency ac voltage, which is characterized by its dc currentvoltage and ac capacitance-voltage (C-V) characteristics.
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Control of carrier lifetime of thick n-type 4H-SiC epilayers by high-temperature Ar annealing
TL;DR: In this article, the carrier lifetime and Z1/2 center density of thick n-type 4H-SiC epilayers were investigated, which were oxidized and subsequently annealed in Ar at high temperatures.