T
Tsunenobu Kimoto
Researcher at Kyoto University
Publications - 635
Citations - 15807
Tsunenobu Kimoto is an academic researcher from Kyoto University. The author has contributed to research in topics: Silicon carbide & Diode. The author has an hindex of 58, co-authored 622 publications receiving 13668 citations. Previous affiliations of Tsunenobu Kimoto include Eötvös Loránd University & Sumitomo Electric Industries.
Papers
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Step‐Controlled Epitaxial Growth of High‐Quality SiC Layers
TL;DR: In this paper, the growth mechanism in chemical vapor deposition (CVD) of silicon carbide (SiC) on off-oriented SiC{0001} substrates (step-controlled epitaxy) is reviewed.
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Step bunching mechanism in chemical vapor deposition of 6H– and 4H–SiC{0001}
TL;DR: In this paper, step bunching in chemical vapor deposition of 6H and 4H-SiC on off-oriented {0001} faces was investigated with cross-sectional transmission electron microscopy.
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Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO/sub 2//SiC MOS system and MOSFET's
TL;DR: In this paper, the effects of wet atmosphere during oxidation and anneal on thermally oxidized p-type and n-type MOS interface properties were systematically investigated for both 4H- and 6H-SiC.
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Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001)
TL;DR: In this article, the sheet resistance of implanted SiC was examined by x-ray photoelectron spectroscopy and the electronic behaviors of P+-implanted SiC were discussed based on Hall effect measurements.
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Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons
Katsunori Danno,Tsunenobu Kimoto +1 more
TL;DR: In this paper, deep levels in n-type 4H-SiC epilayers have been investigated by deep level transient spectroscopy (DLTS) and the Z1∕2 and EH6∕7 centers are dominant in as-grown samples.