Tsunenobu Kimoto

TL;DR: In this paper, annealing in low-oxygen-partial-pressure (low-p O2) ambient is reported to reduce the interface state density (D IT) at a SiC (0001)/SiO2 interface near the conduction band edge (E C) of SiC.

TL;DR: In this article, the authors carried out carrier lifetime measurements for 4H-SiC single crystals in aqueous solutions with various pH by the microwave photoconductivity decay method.

TL;DR: In this paper, the authors investigated the effect of carrier lifetime on electrical characteristics of a 4H-SiC PiN diode with a space-modulated junction termination extension and carrier injection control.

Abstract: Electrically active defects in n-type 6H-SiC diode structures have been studied by deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS. It is shown that the commonly observed broadened DLTS peak previously ascribed to two traps referenced as E1/E2 has three components with activation energies for electron emission of 0.39, 0.43, and 0.44 eV. Further, defects associated with these emission signals have similar electronic structure, each possessing two energy levels with negative-U ordering in the upper half of the 6H-SiC gap. It is argued that the defects are related to a carbon vacancy at three non-equivalent lattice sites in 6H-SiC.

TL;DR: In this article, a non-punch-through (NPT) drift layer was used to suppress the punch-through current under the reverse-blocking condition, and the NPT drift layer achieved a differential specific on-resistance of 13.5 µm at room temperature, which was 33% lower than that of a 3 kV PT RB MOSFET.