T
Tsunenobu Kimoto
Researcher at Kyoto University
Publications - 635
Citations - 15807
Tsunenobu Kimoto is an academic researcher from Kyoto University. The author has contributed to research in topics: Silicon carbide & Diode. The author has an hindex of 58, co-authored 622 publications receiving 13668 citations. Previous affiliations of Tsunenobu Kimoto include Eötvös Loránd University & Sumitomo Electric Industries.
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Journal ArticleDOI
Homoepitaxy of 4H-SiC on trenched (0001) Si face substrates by chemical vapor deposition
TL;DR: In this article, the homoepitaxy of 4H-SiC on trenched substrates by chemical vapor deposition has been investigated, and the strong influence of C/Si ratio on the growth behavior near trenches was revealed.
Journal ArticleDOI
Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
Alexsandre Ellison,Tsunenobu Kimoto,Ivan Gueorguiev Ivanov,Qamar Ul Wahab,Anne Henry,Olof Kordina,Jianhui Zhang,Carl Hemmingsson,Chun-Yuan Gu,M.R. Leys,Erik Janzén +10 more
Journal ArticleDOI
Temperature dependence of conductance in NiO-based resistive switching memory showing two modes in the forming process
TL;DR: In this article, two modes were observed in the forming process in a resistive switching cell based on NiO deposited by radio-frequency reactive sputtering, and the conductance of the cell exhibited several discrete values characterized by integer n multiples of the quantized conductance G 0.
Proceedings ArticleDOI
Reliability-aware design of metal/high-k gate stack for high-performance SiC power MOSFET
Takuji Hosoi,Shuji Azumo,Yusaku Kashiwagi,Shigetoshi Hosaka,Kenji Yamamoto,Masatoshi Aketa,Hirokazu Asahara,Takashi Nakamura,Tsunenobu Kimoto,Takayoshi Shimura,Heiji Watanabe +10 more
TL;DR: In this paper, an advanced metal/high-k gate stack technology for SiC-based power MOSFET was demonstrated, where the Hf incorporation into aluminum oxynitride (HfAlON gate insulator) combined with TIN electrode effectively improved the stability of threshold voltage under both negative and positive bias temperature stresses.
Journal ArticleDOI
Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells
TL;DR: In this article, the authors examined correlation between microscopic structures in NiO layers and forming characteristics in the Pt/NiO/Pt cells and proposed a resistive switching model based on the forming characteristics especially obtained from the RS cells with different size.