다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Phd by thesis

Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.

A Survey of Wide Bandgap Power Semiconductor Devices

Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

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Light-emitting diodes

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Spin transport in n-type 3C-SiC observed in a lateral spin-pumping device

We measured the Fourier transform infrared (FT-IR) and cathodoluminescence (CL) spectra of silicon dioxide (SiO2) films grown on 4H-silicon carbide (4H-SiC) substrates and confirmed that the phonon observed at around 1150-1250 cm−1 originates from the upper branch of the surface phonon polaritons (SPPs) in the SiO2 films and that its frequency is sensitive to the oxide thickness. The relative intensity of the upper branch of SPPs normalized by that of the transverse optical phonon (TO) tended to increase with decreasing channel mobility (CM). A comparison of the FT-IR and CL measurements shows that the relative intensity is correlated with an inhomogeneity in the SiO2-SiC interface and the CM of SiC devices. A combination of FT-IR spectroscopy and CL spectroscopy provides us with a large amount of data on the inhomogeneity, defect, and oxide thickness of SiO2 films on 4H-SiC substrates.

Characterization of Inhomogeneity in Silicon Dioxide Films on 4H-Silicon Carbide Epitaxial Substrate Using a Combination of Fourier Transform Infrared and Cathodoluminescence Spectroscopy

Breakdown characteristics of 4H-SiC PiN diodes with various JTE structures have been investigated. By combining two-zone JTE and Space-Modulated JTE (SM-JTE), a breakdown voltage over 15 kV, corresponding to about 93 % of the parallel-plane breakdown voltage, was realized. The window of optimum JTE dose to obtain high breakdown voltage was widened, which indicates the robustness to the deviation of JTE dose. By comparing the breakdown voltage obtained by simulation and experimental results, impacts of the charge near the SiO2/SiC interface are discussed.

Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes

Lateral spreads of ion-implanted Al and P atoms in silicon carbide

In this chapter we discuss the most basic power devices: Schottky barrier diodes, pin diodes, and JBS (junction barrier controlled Schottky)/MPS (merged pin Schottky) diodes We begin by introducing unipolar and bipolar figures-of-merit to characterize device performance We then consider the physical processes within each device and develop useful design equations, invoking the ambipolar diffusion equation to describe high-level injection in bipolar diodes

Tsunenobu Kimoto

Papers

Spin transport in n-type 3C-SiC observed in a lateral spin-pumping device

Characterization of Inhomogeneity in Silicon Dioxide Films on 4H-Silicon Carbide Epitaxial Substrate Using a Combination of Fourier Transform Infrared and Cathodoluminescence Spectroscopy

Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes

Lateral spreads of ion-implanted Al and P atoms in silicon carbide

Unipolar and Bipolar Power Diodes