다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Phd by thesis

Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.

A Survey of Wide Bandgap Power Semiconductor Devices

Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

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Light-emitting diodes

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Control of carbon vacancy in SiC toward ultrahigh-voltage power devices

In n-type 4H-SiC, over-oxidation of an implanted surface-near, Gaussian nitrogen-profile results in MOS capacitors, which possess a distinctly reduced density of interface states Dit and an undesirable large negative flatband voltage UFB. Their values are determined by the implantation parameters and the thickness of the oxide layer. The negative flatband voltage can strongly be compensated in the case that a Gaussian aluminum-profile is co-implanted prior to the oxidation. Depending on the conditions of the Al implantation, UFB can be controlled within a wide range. Secondary ion mass spectrometry analyses reveal that the implanted N and Al atoms are mobile in the oxide layer during the oxidation process and are partly accumulated at the SiC/SiO2 interface.

Control of the flatband voltage of 4H-SiC Metal-Oxide-Semiconductor (MOS) capacitors by co-implantation of nitrogen and aluminum

Interface States of SiO2/SiC on (11-20) and (0001) Si Faces

Extended defects and deep levels generated during epitaxial growth of 4H-SiC and device processing have been reviewed. Three types in-grown stacking faults, (6,2), (5,3), and (4,4) structures, have been identified in epilayers with a density of 1-10 cm-2. Almost all the major deep levels present in as-grown epilayers have been eliminated (

Defect Control in Growth and Processing of 4H-SiC for Power Device Applications

Epitaxial growth is used to produce active layers of silicon carbide (SiC)-based device structures with designed doping density and thickness, because control of doping and thickness in bulk growth is difficult. Homoepitaxial growth technology by chemical vapor deposition has shown remarkable progress, with polytype replication and reliable control of a wide range of doping densities (1014–1019/cm3) in both n- and p-type materials. This was achieved using step-flow growth and controlling the carbon/silicon ratio, respectively. The gas phase and surface reactions can be well simulated even at a very high growth temperature (∼1600 °C). Types and structures of major extended and point defects in SiC epitaxial layers have been investigated, and the basic phenomena of defect generation and reduction during SiC epitaxy have been clarified. In this chapter, the fundamental aspects and technological developments involved in hexagonal SiC homoepitaxial growth are described.

Tsunenobu Kimoto

Papers

Control of carbon vacancy in SiC toward ultrahigh-voltage power devices

Control of the flatband voltage of 4H-SiC Metal-Oxide-Semiconductor (MOS) capacitors by co-implantation of nitrogen and aluminum

Interface States of SiO2/SiC on (11-20) and (0001) Si Faces

Defect Control in Growth and Processing of 4H-SiC for Power Device Applications

Silicon Carbide Epitaxy