Tsunenobu Kimoto

TL;DR: In this article, the influence of time and temperature on the blistering rate of 4H-SiC wafers with various orientations, on-axis and 8° off-axis (0001), (1100), and (1120).

TL;DR: In this article, the authors investigated the valanche multiplication characteristics in GaN p-n junction diodes under high reverse bias conditions and showed that the photocurrent induced by the Franz-Keldysh effect can be well reproduced by the theoretical calculations of the optical absorption, and their avalanche multiplications were observed.

TL;DR: In this paper, the phonon frequencies of a high-quality AlN layer coherently grown on a 6H-SiC (0001) substrate are investigated by Raman scattering.

TL;DR: In this article, an off-axis 4H-SiC (000-1) epilayer with a specular surface was used for homoepitaxy and homo-epitaxial growth in a SiH4-C3H8-H2 system.

TL;DR: In this article, a defect center was found in a box-shaped He+-profile of a 4H-SiC epilayer, which is not directly formed by He+implantation, but requires an annealing process.