Tsunenobu Kimoto

TL;DR: In this paper, the diffusion of transition metals in 4H-SiC has been investigated by secondary ion mass spectrometry using epilayers and substrates implanted with titanium (Ti), chromium (Cr), iron (Fe), or nickel (Ni).

TL;DR: In this article, the authors suggest that these defects may originate from the same defect in different charge states, related to both carbon interstitials and N atoms, and from the behaviors (generation condition, thermal stability, and change in the depth profiles) of the ON1 and ON2 centers in samples (i) oxidized in O2, implanted with C+ or Si+ atoms and (iii) oxidised in N2O (or NO).

TL;DR: In this article, the impact ionization coefficients in the wide temperature range were determined, which enables accurate device simulation, and a mobility-limiting factor in SiC MOSFETs was discussed.

TL;DR: In this article, SiO2 films with channel mobilities of 35, 105, and 112 cm2/Vs on 4H-SiC (0001) Si, (1-100) M, and (11-20) A faces by post-oxidation annealing (POA) in NO ambient and measured the cathodoluminescence (CL) spectra.

TL;DR: In this article, the effects of surface defects on performance of kV-class 4H-SiC epitaxial mesa pn junction diodes were investigated, and it was shown that triangular-shaped defects severely degrade high blocking capability of the diods whereas shallow round pits and scratch give no direct impact.