다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Phd by thesis

Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.

A Survey of Wide Bandgap Power Semiconductor Devices

Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

/pdf/light-emitting-diodes-ubzde6g9qc.pdf

Light-emitting diodes

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The photoluminescence (PL) spectra of 3C-SiC epilayers grown on 15R-SiC and on 3C-SiC were measured. The PL spectra show strong exciton-related peaks and weak impurity-related peaks. The epilayers are of high quality and have a low density of impurities. Peaks due to excitons bound to neutral nitrogen showed very little shift induced by strain. Peaks considered to be due to free exciton recombination were observed and analyzed. Defect-related bands, usually observed for 3C-SiC grown on Si, were not observed. Although weak defect-related peaks were still observed, the epilayers have a lower density of defects than those on Si.

https://iopscience.iop.org/article/10.1143/JJAP.36.6405/pdf

Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates

SiC epitaxial growth is used to produce active layers with designed doping density and thickness, because control of doping and thickness in bulk growth is difficult. Homoepitaxial growth technology has shown remarkable progress, with polytype replication and wide-range doping control achieved using step-flow growth and controlling the C/Si ratio, respectively. In this chapter we describe the fundamental aspects and technological developments involved in hexagonal SiC homoepitaxial growth, and briefly discuss heteroepitaxial growth of 3C-SiC.

Epitaxial Growth of Silicon Carbide

Deep Level Transient Spectroscopy (DLTS) investigations at different temperatures and with various filling pulse lengths were performed on n-type 4H-SiC epitaxial layers using Iridium Schottky contacts to determine the electrical capture process of the EH6-center. The temperature dependence of the electrical capture cross section σ ~ T-2.0 suggests a cascade capture process, which is not thermally activated. Together with earlier work by Zippelius et al. [4] this proves the acceptor-type of the EH6-center.

Determination of the Electrical Capture Process of the EH6-Center in n-Type 4H-SiC

This paper focuses on using high temperature operating capability of SiC power devices, which are packaged in power modules. A SiC Schottky barrier diode is mounted on an active metal brazed Si3N4 substrate as a heat resistive power module. The temperature dependency of electrical characteristics of the SiC device and thermal dynamics of the power module are modeled for numerical electro thermal analysis. The results of numerical analysis demonstrate high temperature operation of SiC device in the power module, which assumes less heat dissipation by simplified cooling system. The experimental results validate the numerical analysis results of the modeled SiC power module.

/pdf/a-study-on-electro-thermal-response-of-sic-power-module-1lz0z5kqo3.pdf

A study on electro thermal response of SiC power module during high temperature operation

Vanadium ion (51V+) implantation using a low dose in the range of 1012–1013 cm-2 was applied to form a high-resistivity guard ring for high-voltage 4H-SiC Schottky rectifiers. Breakdown voltages were successfully increased by the formation of a 51V+-implanted guard ring. To investigate the effects of the implanted guard ring, the width and depth were varied by the size of the mask pattern and the maximum implantation energy, respectively. With a 150 µm-wide and 0.5 µm-deep 51V+-implanted guard ring, a nearly ideal breakdown voltage of 1630 V was achieved using a 10 µm-thick epilayer.

https://iopscience.iop.org/article/10.1143/JJAP.39.L1216/pdf

Tsunenobu Kimoto

Papers

Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates

Epitaxial Growth of Silicon Carbide

Determination of the Electrical Capture Process of the EH6-Center in n-Type 4H-SiC

A study on electro thermal response of SiC power module during high temperature operation

Vanadium Ion Implanted Guard Rings for High-Voltage 4H-SiC Schottky Rectifiers