V
Veena Misra
Researcher at North Carolina State University
Publications - 251
Citations - 5283
Veena Misra is an academic researcher from North Carolina State University. The author has contributed to research in topics: Gate dielectric & Dielectric. The author has an hindex of 39, co-authored 249 publications receiving 4954 citations. Previous affiliations of Veena Misra include University of North Carolina at Chapel Hill & Motorola.
Papers
More filters
Integration issues with high k gate stacks
Carlton M. Osburn,S. K. Han,I. Kim,Stephen A. Campbell,Eric Garfunkel,T. Gustafson,Jay Hauser,T.-J. King,Q. Liu,P. Ranade,Angus I. Kingon,D.-L. Kwong,S. J. Lee,C. H. Lee,J. Lee,K. Onishi,C. S. Kang,R. Choi,H. Cho,R. Nieh,G. Lucovsky,J. G. Hong,T. P. Ma,Wenjuan Zhu,Z. J. Luo,J. P. Maria,Dwi Wicaksana,Veena Misra,J. J. Lee,Y. S. Suh,Gregory N. Parsons,D. Niu,Susanne Stemmer +32 more
TL;DR: In this paper, the key problems associated with the integration of high k gate stacks (dielectrics plus gate electrodes) in a gate first process are described, starting with the basic material selection.
Proceedings ArticleDOI
Performance enhancement of AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) with atomic layer deposition (ALD) of high-k HfAlO gate dielectric layer
TL;DR: In this paper, the electrical properties of a MOSHFET with ALD HfAlO gate dielectric and compare to the conventional HFET device with a Schottky gate are investigated.
Proceedings ArticleDOI
Highly Sensitive ALD SnO2 Sensors and the Role of its Thickness in Gas Sensing Capabilities
TL;DR: In this article, the authors report superior gas sensing properties of nano-layered atomic layer deposited -tin oxide thin films with room temperature operation and discuss the role of thickness on the sensing response of the films.
Proceedings ArticleDOI
Estimation of Beat-to-Beat Interval from Wearable Photoplethysmography Sensor on Different Measurement Sites During Daily Activities
TL;DR: The results show that the most accurate IBI and HR detection from a wearable PPG device during regular user activity is from the upper arm or finger.
Proceedings ArticleDOI
Low-frequency noise measurements of generation-recombination effect and field-assisted emission in AlGaN/GaN MOSHFETs and HFETs
Cemil Kayis,Jacob H. Leach,C. Y. Zhu,Mo Wu,Xing Li,Xiangyu Yang,Veena Misra,Peter Händel,Ümit Özgür,Hadis Morkoç +9 more
TL;DR: In this paper, the effect of source-drain bias on the excess generation-recombination (GR) noise was investigated through low-frequency phase-noise, which shifted toward higher frequencies at elevated temperatures.