抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success...

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High-κ gate dielectrics: Current status and materials properties considerations

There is a special reason for reviewing this book at this time: it is the 50th edition of a compendium that is known and used frequently in most chemical and physical laboratories in many parts of the world. Surely, a publication that has been published for 56 years, withstanding the vagaries of science in this century, must have had something to offer. There is another reason: while the book is a standard fixture in most chemical and physical laboratories, including those in medical centers, it is not as frequently seen in the laboratories of physician's offices (those either in solo or group practice). I believe that the Handbook can be useful in those laboratories. One of the reasons, among others, is that the various basic items of information it offers may be helpful in new tests, either physical or chemical, which are continuously being published. The basic information may relate

Handbook of Chemistry and Physics

Coinage metals, such as Au, Ag, and Cu, have been important materials throughout history.1 While in ancient cultures they were admired primarily for their ability to reflect light, their applications have become far more sophisticated with our increased understanding and control of the atomic world. Today, these metals are widely used in electronics, catalysis, and as structural materials, but when they are fashioned into structures with nanometer-sized dimensions, they also become enablers for a completely different set of applications that involve light. These new applications go far beyond merely reflecting light, and have renewed our interest in maneuvering the interactions between metals and light in a field known as plasmonics.2–6

In plasmonics, the metal nanostructures can serve as antennas to convert light into localized electric fields (E-fields) or as waveguides to route light to desired locations with nanometer precision. These applications are made possible through a strong interaction between incident light and free electrons in the nanostructures. With a tight control over the nanostructures in terms of size and shape, light can be effectively manipulated and controlled with unprecedented accuracy.3,7 While many new technologies stand to be realized from plasmonics, with notable examples including superlenses,8 invisible cloaks,9 and quantum computing,10,11 conventional technologies like microprocessors and photovoltaic devices could also be made significantly faster and more efficient with the integration of plasmonic nanostructures.12–15 Of the metals, Ag has probably played the most important role in the development of plasmonics, and its unique properties make it well-suited for most of the next-generation plasmonic technologies.16–18

1.1. What is Plasmonics?
Plasmonics is related to the localization, guiding, and manipulation of electromagnetic waves beyond the diffraction limit and down to the nanometer length scale.4,6 The key component of plasmonics is a metal, because it supports surface plasmon polariton modes (indicated as surface plasmons or SPs throughout this review), which are electromagnetic waves coupled to the collective oscillations of free electrons in the metal.

While there are a rich variety of plasmonic metal nanostructures, they can be differentiated based on the plasmonic modes they support: localized surface plasmons (LSPs) or propagating surface plasmons (PSPs).5,19 In LSPs, the time-varying electric field associated with the light (Eo) exerts a force on the gas of negatively charged electrons in the conduction band of the metal and drives them to oscillate collectively. At a certain excitation frequency (w), this oscillation will be in resonance with the incident light, resulting in a strong oscillation of the surface electrons, commonly known as a localized surface plasmon resonance (LSPR) mode.20 This phenomenon is illustrated in Figure 1A. Structures that support LSPRs experience a uniform Eo when excited by light as their dimensions are much smaller than the wavelength of the light.



Figure 1

Schematic illustration of the two types of plasmonic nanostructures discussed in this article as excited by the electric field (Eo) of incident light with wavevector (k). In (A) the nanostructure is smaller than the wavelength of light and the free electrons ...



In contrast, PSPs are supported by structures that have at least one dimension that approaches the excitation wavelength, as shown in Figure 1B.4 In this case, the Eo is not uniform across the structure and other effects must be considered. In such a structure, like a nanowire for example, SPs propagate back and forth between the ends of the structure. This can be described as a Fabry-Perot resonator with resonance condition l=nλsp, where l is the length of the nanowire, n is an integer, and λsp is the wavelength of the PSP mode.21,22 Reflection from the ends of the structure must also be considered, which can change the phase and resonant length. Propagation lengths can be in the tens of micrometers (for nanowires) and the PSP waves can be manipulated by controlling the geometrical parameters of the structure.23

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Controlling the synthesis and assembly of silver nanostructures for plasmonic applications

The discovery of the enhancement of Raman scattering by molecules adsorbed on nanostructured metal surfaces is a landmark in the history of spectroscopic and analytical techniques. Significant experimental and theoretical effort has been directed toward understanding the surface-enhanced Raman scattering (SERS) effect and demonstrating its potential in various types of ultrasensitive sensing applications in a wide variety of fields. In the 45 years since its discovery, SERS has blossomed into a rich area of research and technology, but additional efforts are still needed before it can be routinely used analytically and in commercial products. In this Review, prominent authors from around the world joined together to summarize the state of the art in understanding and using SERS and to predict what can be expected in the near future in terms of research, applications, and technological development. This Review is dedicated to SERS pioneer and our coauthor, the late Prof. Richard Van Duyne, whom we lost during the preparation of this article.

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Present and Future of Surface-Enhanced Raman Scattering

In this work, we have developed a novel gate stack to enhance the mobility of Si face (0001) 4H-SiC lateral MOSFETs while maintaining a high threshold voltage. The gate dielectric consists a thin lanthanum silicate layer at SiC/dielectric interface and SiO2 deposited by atomic layer deposition. MOSFETs using this interface engineering technique show a peak field effect mobility of 133.5 cm2/Vs while maintaining a positive threshold voltage of above 3V. The interface state density measured on MOS capacitor with lanthanum silicate interfacial layers is reduced compared to the capacitors without the silicate. It is shown that the presence of the lanthanum at the interface reduces the formation of a lower quality SiOx interfacial layer typically formed at the SiC surface during typical high temperature anneals. This better quality interfacial layer produces a sharp SiC/dielectric interface, which is confirmed by cross section Z-contrast STEM images.

High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2

Impact of ALD Gate Dielectrics (SiO2, HfO2, and SiO2/HAH) on Device Electrical Characteristics and Reliability of AlGaN/GaN MOSHFET Devices

In this study, oxide stacks formed by combinations of rapid thermal chemical vapor deposition and rapid thermal oxidation have been investigated as gate dielectrics. This was achieved by performing various types of in situ rapid thermal oxidations both prior to and after oxide deposition to form composite stacked structures. The oxidation ambient and temperature was varied to study the effect on electrical properties such as mobility, leakage current, charge trapping, breakdown and hot carrier degradation. It was found that pre-oxidation prior to depositing an oxide results in a composite structure that greatly reduces the defect density by mismatching pores and weak spots in each film. The mobility behavior of these films was also found to be improved over as-deposited oxides. Post-deposition oxidation in O/sub 2/ and N/sub 2/O was also found to improve the mobility characteristics. Additionally, post-annealing in N/sub 2/O was effective in improving the reliability of deposited oxides. These N/sub 2/O annealed films had low interface trap densities, improved high field mobility, very low charge trapping characteristics and enhanced resistance to hot carrier induced interface state generation. These improvements are attributed to 1) the presence of nitrogen at the interface and 2) to the reduction of nitrogen and hydrogen concentrations in the bulk of the oxide. The role of atomic oxygen during the post-anneal in N/sub 2/O is discussed along with differences in annealing ambients.

Electrical properties of composite gate oxides formed by rapid thermal processing

The Interplanetary Dust Experiment (IDE) had over 450 electrically active ultra-high purity metal-oxide-silicon impact detectors located on the six primary sides of the Long Duration Exposure Facility (LDEF). Hypervelocity microparticles (approximately 0.2 to approximately 100 micron diameter) that struck the active sensors with enough energy to breakdown the 0.4 or 1.0 micron thick SiO2 insulator layer separating the silicon base (the negative electrode), and the 1000 A thick surface layer of aluminum (the positive electrode) caused electrical discharges that were recorded for the first year of orbit. The high purity Al-SiO2-Si substrates allowed detection of trace (ppm) amounts of hypervelocity impactor residues. After sputtering through a layer of surface contamination, secondary ion mass spectrometry (SIMS) was used to create two-dimensional elemental ion intensity maps of microparticle sites on the IDE sensors. The element intensities in the central craters of the impacts were corrected for relative ion yields and instrumental conditions and then normalized to silicon. The results classification resulted from the particles' origins as 'manmade', 'natural', or 'indeterminate'. The last classification resulted from the presence of too little impactor residue, analytical interference from high background contamination, the lack of information on silicon and aluminum residues, or a combination of these circumstances. Several analytical 'blank' discharges were induced on flight sensors by pressing down on the sensor surface with a pure silicon shard. Analyses of these blank discharges showed that the discharge energy blasts away the layer of surface contamination. Only Si and Al were detected inside the discharge zones, including the central craters, of these features. Thus far, a total of 79 randomly selected microparticle impact sites from the six primary sides of the LDEF were analyzed: 36 from tray C-9 (Leading (ram), or east, side), 18 from tray C-3 (Trailing (wake), or west, side), 12 from tray B-12 (north side), 4 from tray D-6 (south side), 3 from tray H-11 (space end), and 6 from tray G-10 (earth end). Residue from manmade debris was identified in craters on all trays (aluminum oxide particle residues were not detectable on the Al/Si substrates). These results were consistent with the IDE impact record which showed highly variable long term microparticle impact flux rates on the west, space, and Earth sides of the LDEF which could not be ascribed to astronomical variability of micrometeorite density. The IDE record also showed episodic bursts of microparticle impacts on the east, north, and south sides of the satellite, denoting passage through orbital debris clouds or rings.

Elemental Analyses of Hypervelocity Microparticle Impact Sites on Interplanetary Dust Experiment Sensor Surfaces

This article presents Mo x Ta v as a potential candidate for dual metal complementary metal oxide semiconductor (CMOS) applications. The electrical characterization results of MoTa alloy indicates that the effective work function can be controlled to around 4.3 eV on SiO 2 and is suitable for n-type MOS gate electrode application. The MoTa alloy forms a solid solution instead of an intermetallic compound. We report that the MoTa solid solution can achieve low work function values and is stable up to 900°C. X-ray diffraction results indicated only a single MoTa alloy phase. X-ray photoelectron spectroscopy analysis confirmed that no Mo-Ta compound bonding formed within the MoTa alloy. Moreover, from Auger electron spectroscopy and Rutherford backscattering spectroscopy analysis, MoTa was found to be stable on SiO 2 under high-temperature anneals and no metal diffusion into substrate Si channel was detected. This indicates that Mo x Ta y is a good candidate for CMOS metal gate applications.

Veena Misra

Papers

High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2

Impact of ALD Gate Dielectrics (SiO2, HfO2, and SiO2/HAH) on Device Electrical Characteristics and Reliability of AlGaN/GaN MOSHFET Devices

Electrical properties of composite gate oxides formed by rapid thermal processing

Elemental Analyses of Hypervelocity Microparticle Impact Sites on Interplanetary Dust Experiment Sensor Surfaces

Electrical and Physical Analysis of MoTa Alloy for Gate Electrode Applications